Splitting of valance subbands in the wurtzite c-plane InGaN/GaN quantum well structure

被引：3

作者：

Song, Yu ^{[1
]}

Chen, Dong ^{[1
]}

Wang, Lai ^{[1
]}

Li, Hongtao ^{[1
]}

Xi, Guangyi ^{[1
]}

Jiang, Yang ^{[1
]}

机构：

[1] Tsinghua Univ, Dept Elect Engn, State Key Lab Integrated Optoelect, Beijing 100084, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 16期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.3007985

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Peak splitting in the low temperature photoluminescence (PL) spectra of c-plane InGaN/GaN single quantum well samples was observed. For the k parallel to c configuration, the splitting peaks show a variation in relative intensity as the excitation power is tuned. For the k perpendicular to c configuration, a strong polarization dependence of the luminescence distribution and intensity was spotted. The PL spectra was analyzed with a calculation model based on the k.p effective mass theory, and the splitting peaks were identified as free-exciton transitions between the conduction subband C-1 and two groups of valence subbands, the {HH1,LH1} and the {HH2,LH2,CH1}, respectively. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3007985]

引用

页数：3