Splitting of valance subbands in the wurtzite c-plane InGaN/GaN quantum well structure

被引:3
作者
Song, Yu [1 ]
Chen, Dong [1 ]
Wang, Lai [1 ]
Li, Hongtao [1 ]
Xi, Guangyi [1 ]
Jiang, Yang [1 ]
机构
[1] Tsinghua Univ, Dept Elect Engn, State Key Lab Integrated Optoelect, Beijing 100084, Peoples R China
基金
中国国家自然科学基金;
关键词
D O I
10.1063/1.3007985
中图分类号
O59 [应用物理学];
学科分类号
摘要
Peak splitting in the low temperature photoluminescence (PL) spectra of c-plane InGaN/GaN single quantum well samples was observed. For the k parallel to c configuration, the splitting peaks show a variation in relative intensity as the excitation power is tuned. For the k perpendicular to c configuration, a strong polarization dependence of the luminescence distribution and intensity was spotted. The PL spectra was analyzed with a calculation model based on the k.p effective mass theory, and the splitting peaks were identified as free-exciton transitions between the conduction subband C-1 and two groups of valence subbands, the {HH1,LH1} and the {HH2,LH2,CH1}, respectively. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3007985]
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页数:3
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