Band Gap Engineering of Chemical Vapor Deposited Graphene by in Situ BN Doping

被引：246

作者：

Chang, Cheng-Kai ^{[1
,2
]}

Kataria, Satender ^{[1
,3
]}

Kuo, Chun-Chiang ^{[1
]}

Ganguly, Abhijit ^{[4
]}

Wang, Bo-Yao ^{[5
,6
]}

Hwang, Jeong-Yuan ^{[4
]}

Huang, Kay-Jay ^{[7
]}

Yang, Wei-Hsun ^{[8
]}

Wang, Sheng-Bo ^{[9
,10
]}

Chuang, Cheng-Hao ^{[5
,6
]}

Chen, Mi ^{[7
]}

Huang, Ching-I ^{[2
]}

Pong, Way-Faung ^{[5
]}

Song, Ker-Jar ^{[1
]}

Chang, Shoou-Jinn ^{[9
,10
]}

Guo, Jing-Hua ^{[6
]}

Tai, Yian ^{[8
]}

Tsujimoto, Masahiko ^{[11
]}

Isoda, Seiji ^{[12
]}

Chen, Chun-Wei ^{[3
]}

Chen, Li-Chyong ^{[4
]}

Chen, Kuei-Hsien ^{[1
,4
]}

机构：

[1] Acad Sinica, Inst Atom & Mol Sci, Taipei 10617, Taiwan

[2] Natl Taiwan Univ, Inst Polymer Sci & Engn, Taipei 10617, Taiwan

[3] Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei 10617, Taiwan

[4] Natl Taiwan Univ, Ctr Condensed Matter Sci, Taipei 10617, Taiwan

[5] Tamkang Univ, Dept Phys, Tamsui 251, Taiwan

[6] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Adv Light Source, Berkeley, CA 94720 USA

[7] Minghsin Univ Sci & Technol, Dept Chem & Mat Engn, Hsinchu 30401, Taiwan

[8] Natl Taiwan Univ Sci & Technol, Dept Chem Engn, Taipei 10607, Taiwan

[9] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan

[10] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

[11] Kyoto Univ, Inst Chem Res, Kyoto 6110011, Japan

[12] Kyoto Univ, Inst Integrated Cell Mat Sci, Kyoto 6068501, Japan

来源：

ACS NANO | 2013年 / 7卷 / 02期

关键词：

BN doping; graphene; chemical vapor deposition; band gap; XPS; micro-Raman; XAS-XES; HEXAGONAL BORON-NITRIDE; RAMAN-SPECTROSCOPY; GRAPHITE; DISORDER; LAYERS;

D O I：

10.1021/nn3049158

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Band gap opening and engineering is one of the high priority goals in the development of graphene electronics. Here, we report on the opening and scaling of band gap in BN doped graphene (BNG) films grown by low-pressure chemical vapor deposition method. High resolution transmission electron microscopy is employed to resolve the graphene and h-BN domain formation in great detail. X-ray photoelectron, micro-Raman, and UV vis spectroscopy studies revealed a distinct structural and phase evolution in BNG films at low BN concentration. Synchrotron radiation based XAS-XES measurements concluded a gap opening in BNG films, which is also confirmed by field effect transistor measurements. For the first time, a significant band gap as high as 600 meV is observed for low BN concentrations and is attributed to the opening of the pi-pi* band gap of graphene due to isoelectronic BN doping. As-grown films exhibit structural evolution from homogeneously dispersed small BN clusters to large sized BN domains with embedded diminutive graphene domains. The evolution is described in terms of competitive growth among h-BN and graphene domains with increasing BN concentration. The present results pave way for the development of band gap engineered BN doped graphene-based devices.

引用

页码：1333 / 1341

页数：9

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