Growth kinetics study of SiGe alloys deposited by rapid thermal process, very low pressure chemical vapor deposition

A kinetics study of very low pressure chemical vapor deposition (VLPCVD) of SiGe alloys has been reported in this paper. In the kinetics model, SiGe alloy deposition process has been treated as consisting of three steps: SiH4 and GeH4 adsorption on Si and Ge vacancy sites, hydrogen exchange between silicon and germanium hydrides and hydrogen desorption from a growing surface. The kinetics model is fitted to the data of SiGe layers deposited from decomposition of SiH4 and GeH4 by rapid thermal process VLPCVD method.