Crystallization processes of oxide films on the metal/oxide surface

被引：0

作者：

Nevludov, I. Sh ^{[1
]}

Gurin, V. N. ^{[1
]}

Gurin, D., V ^{[1
]}

Oleksandrov, Yu N. ^{[1
]}

机构：

[1] Kharkiv Natl Univ Radio Elect, 14 Sci Ave, UA-61166 Kharkiv, Ukraine

来源：

FUNCTIONAL MATERIALS | 2020年 / 27卷 / 02期

关键词：

niobium; tantalum; degradation; oxide dielectric; crystallization;

D O I：

10.15407/fm27.02.334

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The paper presents the results of studies of thermal crystallization of oxide dielectrics Nb2O5 and Ta2O5. It was established that the dissolution of oxygen in niobium and tantalum contributes to the suppression of the degradation process associated with the reduction of amorphous oxide with a base metal. It is shown that as a result of redox reactions at the interfacial boundaries of the layered structure, oxygen from the oxide diffuses into the metal, oxidizing the latter. The oxide itself is reduced, which leads to local violations of the chemical composition of the oxide.

引用

页码：334 / 336

页数：3

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