Size effect on quasibound states and negative differential resistances in step-barrier structures

被引：9

作者：

Guo, Y ^{[1
]}

Gu, BL

Zeng, Z

Kawazoe, Y

机构：

[1] Tsing Hua Univ, Dept Phys, Beijing 100084, Peoples R China

[2] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

来源：

PHYSICS LETTERS A | 1999年 / 261卷 / 1-2期

关键词：

heterojunctions; resonant tunneling; quasibound states; negative-differential resistance;

D O I：

10.1016/S0375-9601(99)00568-X

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Electronic states and tunneling properties in step-barrier structures have been investigated, The results indicate that there exists quasibound states in step-barrier structure both at zero bias and under an applied bias. Size effect on negative-differential resistances is examined and the condition for obtaining larger current peak-to-valley ratios has been discussed. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：114 / 118

页数：5

共 16 条

[1] THEORETICAL INVESTIGATIONS OF RESONANT-TUNNELING IN ASYMMETRIC MULTIBARRIER SEMICONDUCTOR HETEROSTRUCTURES IN AN APPLIED CONSTANT ELECTRIC-FIELD [J].

ALLEN, SS ;

RICHARDSON, SL .

PHYSICAL REVIEW B, 1994, 50 (16) :11693-11700

[2] RESONANT TUNNELING THROUGH X-VALLEY STATES IN GAAS/AIAS/GAAS SINGLE-BARRIER HETEROSTRUCTURES [J].

BERESFORD, R ;

LUO, LF ;

WANG, WI ;

MENDEZ, EE .

APPLIED PHYSICS LETTERS, 1989, 55 (15) :1555-1557

[3] ENERGY-BAND DIAGRAMS AND CURRENT-VOLTAGE CHARACTERISTICS OF SINGLE-BARRIER TUNNEL STRUCTURES [J].

BONNEFOI, AR ;

CHOW, DH ;

MCGILL, TC .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (09) :3836-3844

[4] NEGATIVE DIFFERENTIAL RESISTANCES FROM HG1-XCDX TE-CDTE SINGLE QUANTUM BARRIER HETEROSTRUCTURES [J].

CHOW, DH ;

MCGILL, TC .

APPLIED PHYSICS LETTERS, 1986, 48 (21) :1485-1487

[5] OBSERVATION OF NEGATIVE DIFFERENTIAL RESISTANCE FROM A SINGLE BARRIER HETEROSTRUCTURE [J].

CHOW, DH ;

MCGILL, TC ;

SOU, IK ;

FAURIE, JP ;

NIEH, CW .

APPLIED PHYSICS LETTERS, 1988, 52 (01) :54-56

[6] EFFECT OF A TRANSVERSE MAGNETIC-FIELD ON THE TUNNEL CURRENT THROUGH THICK AND LOW SEMICONDUCTOR BARRIERS [J].

GUERET, P ;

BARATOFF, A ;

MARCLAY, E .

EUROPHYSICS LETTERS, 1987, 3 (03) :367-372

[7] Resonant tunneling in step-barrier structures under an applied electric field [J].

Guo, Y ;

Gu, BL ;

Yu, JZ ;

Zeng, Z ;

Kawazoe, Y .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (02) :918-924

[8] Level width of a quasibound state in a double-barrier parabolic-well resonant tunneling structure [J].

Guo, Y ;

Gu, BL ;

Duan, WH .

ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1997, 102 (02) :217-221

[9] TUNNELING THROUGH NARROW-GAP SEMICONDUCTOR BARRIERS [J].

HEREMANS, J ;

PARTIN, DL ;

DRESSELHAUS, PD ;

LAX, B .

APPLIED PHYSICS LETTERS, 1986, 48 (10) :644-646

[10] TUNNELING THROUGH ALAS BARRIERS - GAMMA-X TRANSFER CURRENT [J].

LANDHEER, D ;

LIU, HC ;

BUCHANAN, M ;

STONER, R .

APPLIED PHYSICS LETTERS, 1989, 54 (18) :1784-1786

← 1 2 →