High-speed digital circuits using InP-based resonant tunneling diode and high electron mobility transistor heterostructure

被引：7

作者：

Kim, Hyungtae ^{[1
]}

Yeon, Seongjin ^{[1
]}

Song, Sangho ^{[1
]}

Park, Sangho ^{[1
]}

Seo, Kwangseok ^{[1
]}

机构：

[1] Seoul Natl Univ, Sch Elect Engn & Comp Sci, Seoul 151742, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2006年 / 45卷 / 4B期

关键词：

ring oscillator; MOBILE; ADC; RTD; HEMT;

D O I：

10.1143/JJAP.45.3384

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Resonant tunneling diodes (RTDs) exhibit a negative-differential-resistance (NDR) characteristic and a picosecond-level switching time (1.5 ps). The NDR characteristic provides the possibility of reducing circuit complexity and power consumption. The RTD's very fast switching characteristic provides the possibility of high-speed operation. Utilizing the RTD's characteristics, we designed and fabricated high-speed implementations of a static inverter, a three-stage ring oscillator, and basic Boolean logic gates. Using these results, we designed a 2-bit analog-to-digital converter (ADC) with reduced circuit complexity. Spice simulation proved that the designed ADC can operate at a sampling frequency of up to 10 GHz.

引用

页码：3384 / 3386

页数：3

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