Large Single-Crystal Hexagonal Boron Nitride Monolayer Domains with Controlled Morphology and Straight Merging Boundaries

被引:66
作者
Yin, Jun [1 ]
Yu, Jin [1 ]
Li, Xuemei [1 ]
Li, Jidong [1 ]
Zhou, Jianxin [1 ]
Zhang, Zhuhua [1 ]
Guo, Wanlin [1 ]
机构
[1] Nanjing Univ Aeronaut & Astronaut, Inst Nanosci, Minist Educ, Key Lab Intelligent Nano Mat & Devices,State Key, Nanjing 210016, Jiangsu, Peoples R China
关键词
controlled morphology; grain boundaries; nanoribbons; hexagonal boron nitride; boron nitride; signal crystals; CHEMICAL-VAPOR-DEPOSITION; GRAIN-BOUNDARIES; GRAPHENE; NANORIBBONS; GROWTH; FILMS; NANOTUBES; NI(111); LAYER; SIZE;
D O I
10.1002/smll.201500210
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Hexagonal boron nitride monolayers with domain sizes up to 700 μm2 and geometry from triangle to hexagon are fabricated through a refined control over the precursor and morphology of the copper substrate. Hydrogen etching is shown to tailor the h-BN monolayers precisely along the grain boundaries, providing their morphology over micrometer scale and a new avenue toward fabricating nanoribbons. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码:4497 / 4502
页数:6
相关论文
共 32 条
  • [1] Synthesis of one monolayer of hexagonal boron nitride on Ni(111) from B-trichloroborazine (ClBNH)3
    Auwärter, W
    Suter, HU
    Sachdev, H
    Greber, T
    [J]. CHEMISTRY OF MATERIALS, 2004, 16 (02) : 343 - 345
  • [2] Defect lines and two-domain structure of hexagonal boron nitride films on Ni(111)
    Auwärter, W
    Muntwiler, M
    Osterwalder, J
    Greber, T
    [J]. SURFACE SCIENCE, 2003, 545 (1-2) : L735 - L740
  • [3] Magnetic boron nitride nanoribbons with tunable electronic properties
    Barone, Veronica
    Peralta, Juan E.
    [J]. NANO LETTERS, 2008, 8 (08) : 2210 - 2214
  • [4] QUASI-PARTICLE BAND-STRUCTURE OF BULK HEXAGONAL BORON-NITRIDE AND RELATED SYSTEMS
    BLASE, X
    RUBIO, A
    LOUIE, SG
    COHEN, ML
    [J]. PHYSICAL REVIEW B, 1995, 51 (11): : 6868 - 6875
  • [5] Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures
    Britnell, L.
    Gorbachev, R. V.
    Jalil, R.
    Belle, B. D.
    Schedin, F.
    Mishchenko, A.
    Georgiou, T.
    Katsnelson, M. I.
    Eaves, L.
    Morozov, S. V.
    Peres, N. M. R.
    Leist, J.
    Geim, A. K.
    Novoselov, K. S.
    Ponomarenko, L. A.
    [J]. SCIENCE, 2012, 335 (6071) : 947 - 950
  • [6] Millimeter-Size Single-Crystal Graphene by Suppressing Evaporative Loss of Cu During Low Pressure Chemical Vapor Deposition
    Chen, Shanshan
    Ji, Hengxing
    Chou, Harry
    Li, Qiongyu
    Li, Hongyang
    Suk, Ji Won
    Piner, Richard
    Liao, Lei
    Cai, Weiwei
    Ruoff, Rodney S.
    [J]. ADVANCED MATERIALS, 2013, 25 (14) : 2062 - 2065
  • [7] Boron nitride substrates for high-quality graphene electronics
    Dean, C. R.
    Young, A. F.
    Meric, I.
    Lee, C.
    Wang, L.
    Sorgenfrei, S.
    Watanabe, K.
    Taniguchi, T.
    Kim, P.
    Shepard, K. L.
    Hone, J.
    [J]. NATURE NANOTECHNOLOGY, 2010, 5 (10) : 722 - 726
  • [8] Repeated and Controlled Growth of Monolayer, Bilayer and Few-Layer Hexagonal Boron Nitride on Pt Foils
    Gao, Yang
    Ren, Wencai
    Ma, Teng
    Liu, Zhibo
    Zhang, Yu
    Liu, Wen-Bin
    Ma, Lai-Peng
    Ma, Xiuliang
    Cheng, Hui-Ming
    [J]. ACS NANO, 2013, 7 (06) : 5199 - 5206
  • [9] Atomic Resolution Imaging of Grain Boundary Defects in Monolayer Chemical Vapor Deposition-Grown Hexagonal Boron Nitride
    Gibb, Ashley L.
    Alem, Nasim
    Chen, Jian-Hao
    Erickson, Kristopher J.
    Ciston, Jim
    Gautam, Abhay
    Linck, Martin
    Zettl, Alex
    [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2013, 135 (18) : 6758 - 6761
  • [10] Boron Nitride Nanotubes and Nanosheets
    Golberg, Dmitri
    Bando, Yoshio
    Huang, Yang
    Terao, Takeshi
    Mitome, Masanori
    Tang, Chengchun
    Zhi, Chunyi
    [J]. ACS NANO, 2010, 4 (06) : 2979 - 2993