Metal-germanide Schottky source/drain transistor on germanium substrate for future CMOS technology

in this study, we survey Schottky diode property of both p-metal (Ni) germanide and n-metal (Zr, Er and Yb) germanide in contact with Ge (100). Our experimental results demonstrate that Phi(p) values obtained for NiGe/n-Ge is - 0.07 eV, and Phi(n) values for YbGe/p-Ge is 0.139 eV, the lowest hole barrier so far reported. In addition, NiGe Schottky source/drain p-MOSFET with HfO2/TaN gate stack and AIN/SiO2 stacked spacer were fabricated and measured. The drain current at V-D= V-G - V-th = -1.5 V is similar to 4.0 mu A/mu m of the gate length L-G =8 mu m device. The I-on/I-off ratio is similar to 10(3), and sub-threshold swing is 137 mV/dec. (c) 2005 Published by Elsevier BY.