Electron-beam incident-angle-resolved cathodoluminescence studies on bulk ZnO crystals

被引：5

作者：

Onuma, Takeyoshi ^{[1
]}

Yamaguchi, Tomohiro ^{[1
]}

Honda, Tohru ^{[1
]}

机构：

[1] Tokyo Natl Coll Technol, Dept Liberal Arts, Hachioji, Tokyo 1930997, Japan

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 5 | 2013年 / 10卷 / 05期

关键词：

ZnO; angle-resolved; cathodoluminescence; GROWTH; CASINO; GAN;

D O I：

10.1002/pssc.201200598

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electron-beam incidence-angle-resolved cathodoluminescence (IAR-CL) measurements on ZnO single crystals were demonstrated as an alternative way for the depth-resolved cathodoluminescence (CL) study by scanning acceleration voltage of the electron-beam. Incidence-angle dependent near-band-edge CL intensities were well reproduced by analyses considering a radiation pattern, an expansion of the electron-beam irradiation area, and an internal absorption factors. The quantitative agreement between the experimental and simulated results indicates that the IAR-CL technique is suitable for practical use in the depth-resolved CL study of device structures. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：869 / 872

页数：4

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