Solution-processed CuOx as an efficient hole-extraction layer for inverted planar heterojunction perovskite solar cells

被引:90
作者
Yu, Zhi-Kai [1 ]
Fu, Wei-Fei [1 ]
Liu, Wen-Qing [1 ]
Zhang, Zhong-Qiang [1 ]
Liu, Yu-Jing [1 ]
Yan, Jie-Lin [1 ]
Ye, Tao [1 ]
Yang, Wei-Tao [1 ]
Li, Han-Ying [1 ]
Chen, Hong-Zheng [1 ]
机构
[1] Zhejiang Univ, Dept Polymer Sci & Engn, State Key Lab Silicon Mat, MOE Key Lab Macromol Synth & Functionalizat, Hangzhou 310027, Zhejiang, Peoples R China
基金
美国国家科学基金会;
关键词
CuOx; Solution-processing; Hole-transporting layer; Perovskite solar cells; Stable; ANODE BUFFER LAYER; HIGH-PERFORMANCE; TRANSPORT LAYER; HYBRID PEROVSKITE; OXIDE; HYSTERESIS; FILMS; CU2O; MORPHOLOGY; CORE;
D O I
10.1016/j.cclet.2016.06.021
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A solution-processed CuOx film has been successfully integrated as the hole-transporting layer (HTL) for inverted planar heterojunction perovskite solar cells (PVSCs). The CuOx layer is fabricated by simply spin-coating a copper acetylacetonate (Cu(acac)(2)) chloroform solution onto ITO glass with high transparency in the visible range. The compact and pinhole-free perovskite film with large grain domains is grown on the CuOx film. The inverted PVSCs with the structure of ITO/CuO(x)iMAPbI(3)/PC61BM/ZnO/Al are fabricated and show a best PCE of 17.43% under standard AM 1.5G simulated solar irradiation with a V-OC of 1.03 V, a J(sc) of 22.42 mA cm(-2), and a fill factor of 0.76, which is significantly higher and More stable than that fabricated from the often used hole-transporting material PEDOT:PSS (11.98%) under the same experimental conditions. The enhanced performance is attributed to the efficient hole extraction through the CuOx layer as well as the high-quality CH3NH3PbI3 films grown on the CuOx. Our results indicate that low-cost and solution-processed CuOx film is a promising HTL for high performance PVSCs with better stability. (C) 2016 Chinese Chemical Society and Institute of Materia Medica, Chinese Academy of Medical Sciences. Published by Elsevier B.V. All rights reserved.
引用
收藏
页码:13 / 18
页数:6
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