MBE growth optimization of InAs (001) homoepitaxy

被引：30

作者：

Ye, Hao ^{[1
]}

Li, Lu ^{[1
]}

Hinkey, Robert T. ^{[1
,2
]}

Yang, Rui Q. ^{[1
]}

Mishima, Tetsuya D. ^{[2
]}

Keay, Joel C. ^{[2
]}

Santos, Michael B. ^{[2
]}

Johnson, Matthew B. ^{[2
]}

机构：

[1] Univ Oklahoma, Sch Elect & Comp Engn, Norman, OK 73019 USA

[2] Univ Oklahoma, Homer L Dodge Dept Phys & Astron, Norman, OK 73019 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2013年 / 31卷 / 03期

基金：

美国国家科学基金会;

关键词：

ROOM-TEMPERATURE OPERATION; INTERBAND-CASCADE-LASERS; MOLECULAR-BEAM EPITAXY; SURFACE-DEFECTS; OVAL DEFECTS; GAAS-LAYERS; MU-M; INAS(001); GAAS(001);

D O I：

10.1116/1.4804397

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The optimal conditions for growth of homoepitaxial InAs layers by molecular beam epitaxy were investigated over a wide range of substrate temperatures and As-2/In flux ratios at a growth rate of 0.66 monolayer/s. Material quality was investigated using a variety of techniques: differential interference contrast microscopy, scanning electron microscopy, and atomic force microscopy. The results indicated that the InAs layer grown at a temperature between 430 and 450 degrees C with an As-2/In flux ratio of about 15:1 yielded the highest quality, with a defect density of 2 x 10(4) cm(-2) and a root mean square roughness of 0.19 nm. The quality can be further improved by growth at a lower growth rate of 0.22 monolayer/s. The morphology of large oval hillock defects on the InAs layers suggested that these defects originated at the substrate surface. (C) 2013 American Vacuum Society.

引用

页数：6

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