Fast response ZnO:Al/CuO nanowire/ZnO:Al heterostructure light sensors fabricated by dielectrophoresis

被引：11

作者：

Garcia Marin, A. ^{[1
]}

Garcia Nunez, C. ^{[1
]}

Ruiz, E. ^{[1
]}

Piqueras, J. ^{[1
]}

Pau, J. L. ^{[1
]}

机构：

[1] Univ Autonoma Madrid, Fac Ciencias, Dpto Fis Aplicada, Lab Microelect,Grp ELySE, E-28049 Madrid, Spain

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 23期

关键词：

CUO NANOWIRES; THERMAL-OXIDATION; PHOTODETECTORS;

D O I：

10.1063/1.4811128

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Metal oxide nanowire (NW) photoconductors tend to exhibit high photoconductive gains and long recovery times mainly due to surface effects. In this work, p-type CuO NWs are synthesized by direct oxidation of copper and deposited on n-type ZnO:Al electrodes by dielectrophoresis. The heterostructure is electro-optically characterized showing recovery times in the 10 mu s range, mainly limited by the resistance-capacitance product of the equivalent circuit, without signs of persistent effects. The fast response is attributed to short transit times across space charge regions built between CuO and ZnO:Al materials and fast carrier recombination at neutral regions. (C) 2013 AIP Publishing LLC.

引用

页数：4

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