Sensitivity enhancement of amorphous InGaZnO thin film transistor based extended gate field-effect transistors with dual-gate operation

被引：68

作者：

Jang, Hyun-June ^{[1
]}

Gu, Ja-Gyeong ^{[1
]}

Cho, Won-Ju ^{[1
]}

机构：

[1] Kwangwoon Univ, Dept Elect Mat Engn, Seoul 139701, South Korea

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 2013年 / 181卷

关键词：

EGFET; TiO2; Dual-gate; a-IGZO; HYSTERESIS; DEVICE; MODEL;

D O I：

10.1016/j.snb.2013.02.056

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

Amorphous indium-gallium zinc oxide (a-IGZO) based TiO2 extended gate field-effect transistors (EGFETs) with a high pH sensitivity of 129.1 mV/pH beyond the Nernst response limit were realized by the dual gate operation mode. The capacitive coupling between the front and bottom gate dielectric for the DG operation greatly improved its sensitivity as well as its chemical stability. The developed high performance pH sensor was rooted in outstanding electrical characteristics of an a-IGZO thin film transistor with an on/off current ratio of 3.7 x 10(7), a subthreshold swing of 86 mV/dec, and a field-effect mobility of 17.62 cm(2)/V s. (c) 2013 Elsevier B.V. All rights reserved.

引用

页码：880 / 884

页数：5

共 31 条

[1] Thirty years of ISFETOLOGY - What happened in the past 30 years and what may happen in the next 30 years [J].

Bergveld, P .

SENSORS AND ACTUATORS B-CHEMICAL, 2003, 88 (01) :1-20

[2] DEVELOPMENT OF AN ION-SENSITIVE SOLID-STATE DEVICE FOR NEUROPHYSIOLOGICAL MEASUREMENTS [J].

BERGVELD, P .

IEEE TRANSACTIONS ON BIOMEDICAL ENGINEERING, 1970, BM17 (01) :70-&

[3] COMPARISON OF THE HYSTERESIS OF TA2O5 AND SI3N4 PH-SENSING INSULATORS [J].

BOUSSE, L ;

MOSTARSHED, S ;

VANDERSCHOOT, B ;

DEROOIJ, NF .

SENSORS AND ACTUATORS B-CHEMICAL, 1994, 17 (02) :157-164

[4] Study on extended gate field effect transistor with tin oxide sensing membrane [J].

Chi, LL ;

Chou, JC ;

Chung, WY ;

Sun, TP ;

Hsiung, SK .

MATERIALS CHEMISTRY AND PHYSICS, 2000, 63 (01) :19-23

[5] Study on separative structure of EnFET to detect acetylcholine [J].

Chi, LL ;

Yin, LT ;

Chou, JC ;

Chung, WY ;

Sun, TP ;

Hsiung, KP ;

Hsiung, SK .

SENSORS AND ACTUATORS B-CHEMICAL, 2000, 71 (1-2) :68-72

[6] High-Performance a-IGZO Thin-Film Transistor Using Ta2O5 Gate Dielectric [J].

Chiu, C. J. ;

Chang, S. P. ;

Chang, S. J. .

IEEE ELECTRON DEVICE LETTERS, 2010, 31 (11) :1245-1247

[7] Chemical and biological sensors using polycrystalline silicon TFTs [J].

Estrela, Pedro ;

Migliorato, Piero .

JOURNAL OF MATERIALS CHEMISTRY, 2007, 17 (03) :219-224

[8] A NEURON-SILICON JUNCTION - A RETZIUS CELL OF THE LEECH ON AN INSULATED-GATE FIELD-EFFECT TRANSISTOR [J].

FROMHERZ, P ;

OFFENHAUSSER, A ;

VETTER, T ;

WEIS, J .

SCIENCE, 1991, 252 (5010) :1290-1293

[9] Detection of DNA and proteins using amorphous silicon ion-sensitive thin-film field effect transistors [J].

Goncalves, D. ;

Prazeres, D. M. F. ;

Chu, V. ;

Conde, J. P. .

BIOSENSORS & BIOELECTRONICS, 2008, 24 (04) :545-551

[10] Polysilicon Channel TFT With Separated Double-Gate for Unified RAM (URAM)Unified Function for Nonvolatile SONOS Flash and High-Speed Capacitorless 1T-DRAM [J].

Han, Jin-Woo ;

Ryu, Seong-Wan ;

Kim, Dong-Hyun ;

Choi, Yang-Kyu .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2010, 57 (03) :601-607

← 1 2 3 4 →