Distributed contact flip chip InGaN/GaN blue LED; comparison with conventional LEDs

被引：8

作者：

Genc, M. ^{[1
,2
]}

Sheremet, V. ^{[3
]}

Elci, M. ^{[3
,4
]}

Kasapoglu, A. E. ^{[5
,6
]}

Altuntas, I. ^{[7
]}

Demir, I. ^{[7
]}

Egin, G. ^{[1
]}

Islamoglu, S. ^{[8
]}

Gur, Emre ^{[5
]}

Muzafferoglu, N. ^{[1
]}

Elagoz, S. ^{[7
]}

Gulseren, O. ^{[8
]}

Aydinli, A. ^{[9
]}

机构：

[1] Ermaksan AS, Optoelect R&D Ctr, TR-16065 Bursa, Turkey

[2] Bursa Tech Univ, Dept Mat Sci & Engn, TR-16310 Bursa, Turkey

[3] Bilkent Univ, Adv Res Labs, TR-06800 Ankara, Turkey

[4] Middle East Tech Univ, Inst Appl Math, TR-06800 Ankara, Turkey

[5] Ataturk Univ, Dept Phys, TR-25240 Erzurum, Turkey

[6] Ataturk Univ, East Anatolia High Technol Applicat & Res Ctr, TR-25240 Erzurum, Turkey

[7] Cumhuriyet Univ, Nanotechnol Res Ctr, TR-58140 Sivas, Turkey

[8] Bilken Univ, Dept Phys, TR-06800 Ankara, Turkey

[9] Uludag Univ, Elect & Elect Engn Dept, TR-16059 Bursa, Turkey

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2019年 / 128卷

关键词：

Light emitting diodes; Luminescence; LED performance; Current distribution; LIGHT-EMITTING-DIODES;

D O I：

10.1016/j.spmi.2019.01.008

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

This paper presents high performance, GaN/InGaN-based light emitting diodes (LEDs) in three different device configurations, namely Top Emitting (TE) LED, conventional Flip Chip (FC) and Distributed Contact (DC) FC. Series resistances as low as 1.1 Omega have been obtained from FC device configurations with a back reflecting ohmic contact of Ni/Au/RTA/Ni/Ag metal stack. A small shift has been observed between electroluminescence (EL) emissions of TE LED and the FC LEDs. In addition, FWHM value of the EL emission of DCFC LED has shown the minimum value of 160 meV (26.9 nm). Furthermore, DCFC LED configuration has shown the highest quantum efficiency and power output, with 330 mW at 500 mA current injection, compared to that of traditional wire bonded TE LEDs and the conventional FC LEDs.

引用

页码：9 / 13

页数：5

共 17 条

[1] N-Polar III-Nitride Green (540 nm) Light Emitting Diode
Akyol, Fatih
Nath, Digbijoy N.
Gur, Emre
Park, Pil Sung
Rajan, Siddharth
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (05)
[2] The effects of two-stage HT-GaN growth with different V/III ratios during 3D-2D transition
Altuntas, Ismail
Demir, Ilkay
Kasapoglu, Ahmet Emre
Mobtakeri, Soheil
Gur, Emre
Elagoz, Sezai
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2018, 51 (03)
[3] Optical characterization of magnesium incorporation in p-GaN layers for core-shell nanorod light-emitting diodes
Girgel, I
Satka, A.
Priesol, J.
Coulon, P-M
Le Boulbar, E. D.
Batten, T.
Allsopp, D. W. E.
Shields, P. A.
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2018, 51 (15)
[4] Photoelectrochemical Liftoff of Patterned Sapphire Substrate for Fabricating Vertical Light-Emitting Diode
Hsieh, Chieh
Chen, Horng-Shyang
Liao, Che-Hao
Chen, Chih-Yen
Lin, Chun-Han
Lin, Cheng-Hung
Ting, Shao-Ying
Yao, Yu-Feng
Chen, Hao-Tsung
Kiang, Yean-Woei
Yang, Chih-Chung
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2012, 24 (19) : 1775 - 1777
[5] Performance of InGaN-Based Thin-Film LEDs With Flip-Chip Configuration and Concavely Patterned Surface Fabricated on Electroplating Metallic Substrate
Hu, Xiao-Long
Qi, Zhao-Yi
Wang, Hong
Zhang, Xi-Chun
[J]. IEEE PHOTONICS JOURNAL, 2016, 8 (01):
[6] High-brightness InGaN-GaN flip-chip light-emitting diodes with triple-light scatteriny layers
Lee, Chia-En
Lee, Yea-Chen
Kuo, Hao-Chung
Lu, Tien-Chang
Wang, Shing-Chung
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2008, 20 (5-8) : 659 - 661
[7] InGaN-Based High-Power Flip-Chip LEDs With Deep-Hole-Patterned Sapphire Substrate by Laser Direct Beam Drilling
Lee, Jae-Hoon
Hwang, Seok-Min
Kim, Nam-Seung
Lee, Jung-Hee
[J]. IEEE ELECTRON DEVICE LETTERS, 2010, 31 (07) : 698 - 700
[8] Numerical simulation and experimental investigation of GaN-based flip-chip LEDs and top-emitting LEDs
Liu, Xingtong
Zhou, Shengjun
Gao, Yilin
Hu, Hongpo
Liu, Yingce
Gui, Chengqun
Liu, Sheng
[J]. APPLIED OPTICS, 2017, 56 (34) : 9502 - 9509
[9] High power InGaN/GaN flip-chip LEDs with via-hole-based two-level metallization electrodes
Lv, Jiajiang
Zheng, Chenju
Chen, Quan
Zhou, Shengjun
Liu, Sheng
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2016, 213 (12): : 3150 - 3156
[10] RF-molecular beam epitaxy growth and properties of InN and related alloys
Nanishi, Y
Saito, Y
Yamaguchi, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (5A): : 2549 - 2559

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