Weak Localization of Dirac Fermions in HgTe Quantum Wells

被引：37

作者：

Kozlov, D. A. ^{[1
,2
]}

Kvon, Z. D. ^{[1
,2
]}

Mikhailov, N. N. ^{[1
]}

Dvoretsky, S. A. ^{[1
]}

机构：

[1] Russian Acad Sci, Rzhanov Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia

[2] Novosibirsk State Univ, Novosibirsk 630090, Russia

来源：

JETP LETTERS | 2013年 / 96卷 / 11期

基金：

俄罗斯基础研究基金会;

关键词：

JETP Letter; Gate Voltage; HgTe; Dirac Fermion; Heavy Hole;

D O I：

10.1134/S0021364012230099

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Weak localization in a system of gapless two-dimensional Dirac fermions in HgTe quantum wells with thickness d = 6.6 nm, which corresponds to the transition from a normal to an inverted spectrum, has been investigated experimentally. A negative logarithmic correction to the conductivity of the system has been observed both at the Dirac point and in the vicinity of this point. The anomalous magnetoresistance of two-dimensional Dirac fermions is positive. This indicates that weak localization in the system of two-dimensional Dirac fermions occurs owing to localization and interaction effects in the presence of rapid spin relaxation. DOI: 10.1134/S0021364012230099

引用

页码：730 / 734

页数：5

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