AlGaAs red light-emitting diodes

被引:16
作者
Steranka, FM [1 ]
机构
[1] Hewlett Packard Co, Div Optoelect, San Jose, CA 95131 USA
来源
HIGH BRIGHTNESS LIGHT EMITTING DIODES | 1997年 / 48卷
关键词
D O I
10.1016/S0080-8784(08)62404-7
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
[No abstract available]
引用
收藏
页码:65 / 96
页数:32
相关论文
共 48 条
[1]   MINORITY-CARRIER LIFETIME IN ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY [J].
AHRENKIEL, RK ;
KEYES, BM ;
SHEN, TC ;
CHYI, JI ;
MORKOC, H .
JOURNAL OF APPLIED PHYSICS, 1991, 69 (05) :3094-3096
[2]  
ALFEROV ZI, 1975, SOV PHYS SEMICOND+, V9, P305
[3]  
ALFEROV ZI, 1973, SOV PHYS SEMICOND+, V6, P1620
[4]  
[Anonymous], 1972, PROG SOLID STATE CHE
[5]  
Casey Jr H. C., 1978, HETEROSTRUCTURE LASE
[6]  
Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9
[7]  
COOK LW, 1988, P INT S GAAS REL COM, V91, P777
[8]  
CRAFORD MG, 1994, ENCY APPLIED PHYSICS, V8, P485, DOI DOI 10.1002/3527600434.EAP200
[9]   NEAR-EQUILIBRIUM LPE GROWTH OF GAAS-GA1-XALXAS DOUBLE HETEROSTRUCTURES [J].
DAWSON, LR .
JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) :86-96
[10]   STAGGERED BAND ALIGNMENTS IN ALGAAS HETEROJUNCTIONS AND THE DETERMINATION OF VALENCE-BAND OFFSETS [J].
DAWSON, P ;
WILSON, BA ;
TU, CW ;
MILLER, RC .
APPLIED PHYSICS LETTERS, 1986, 48 (08) :541-543