Ba2TiO4 and Ba4Ti13O30 Thick Films Prepared by Laser Chemical Vapor Deposition and Their Microstructure

被引：1

作者：

Guo, Dongyun ^{[1
]}

Ito, Akihiko ^{[1
]}

Tu, Rong ^{[1
]}

Goto, Takashi ^{[1
]}

机构：

[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

来源：

MATERIALS INTEGRATION | 2012年 / 508卷

关键词：

Ba2TiO5; Ba4Ti13O30; Thick film; Laser CVD; DIELECTRIC-PROPERTIES;

D O I：

10.4028/www.scientific.net/KEM.508.199

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ba2TiO4 and Ba4Ti13O30 thick films were prepared by laser chemical vapor deposition using Ba- and Ti-dipivaloylmethanate precursors. Single-phase Ba2TiO4 thick films were obtained at 845-946 K and Ba/Ti source molar ratio 2.4. Single-phase Ba4Ti13O30 films were obtained at 944-1011 K and Ba/Ti source molar ratio 0.38. Ba2TiO4 thick films consisted of truncated grains, while Ba4Ti13O30 thick films had shellfish-like grains. Ba2TiO4 and Ba4Ti13O30 thick films showed a columnar growth and their deposition rates were 72 and 132 mu m h(-1), respectively.

引用

页码：199 / 202

页数：4

共 9 条

[1]

Guenter J. R., 1984, ACTA CRYSTALLOGR C, V40, P207

[2] High-speed deposition of Y-Si-O films by laser chemical vapor deposition using Nd:YAG laser [J].

Ito, Akihiko ;

Endo, Jun ;

Kimura, Teiichi ;

Goto, Takashi .

SURFACE & COATINGS TECHNOLOGY, 2010, 204 (23) :3846-3850

[3] Texture and orientation characteristics of α-Al2O3 films prepared by laser chemical vapor deposition using Nd:YAG laser [J].

Ito, Akihiko ;

Kadokura, Hokuto ;

Kimura, Teiichi ;

Goto, Takashi .

JOURNAL OF ALLOYS AND COMPOUNDS, 2010, 489 (02) :469-474

[4] Microstructure and dielectric properties of the Ti-rich BaO-TiO2 thin films for microwave devices [J].

Jang, Bo-Yun ;

Jeong, Young-Hun ;

Lee, Suk-Jin ;

Lee, Kyong-Jae ;

Nahm, Sahn ;

Sun, Ho-Jung ;

Lee, Hwack-Joo .

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2006, 26 (10-11) :1913-1916

[5]

PHULE PP, 1990, J MATER SCI, V25, P1169

[6] CO2 Recovery at High Temperatures Using Ba2TiO4 [J].

Saito, Yoshinori ;

Sato, Hideto ;

Sakabe, Yukio .

JOURNAL OF CHEMICAL ENGINEERING OF JAPAN, 2008, 41 (05) :441-446

[7]

Tillmanns E., 1982, Crystal Structure Communications, V11, P2087

[8] Microstructure and dielectric properties of barium titanate film prepared by MOCVD [J].

Tohma, T ;

Masumoto, H ;

Goto, T .

MATERIALS TRANSACTIONS, 2002, 43 (11) :2880-2884

[9] High-speed preparation of c-axis-oriented YBa2Cu3O7-δ film by laser chemical vapor deposition [J].

Zhao, Pei ;

Ito, Akihiko ;

Tu, Rong ;

Goto, Takashi .

MATERIALS LETTERS, 2010, 64 (01) :102-104

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