The electronic structure of Tb silicide nanowires on Si(001)

被引：10

作者：

Appelfeller, S. ^{[1
]}

Franz, M. ^{[1
]}

Jirschik, H-F ^{[1
]}

Grosse, J. ^{[1
]}

Daehne, M. ^{[1
]}

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, Hardenbergstr 36, D-10623 Berlin, Germany

来源：

NEW JOURNAL OF PHYSICS | 2016年 / 18卷

基金：

奥地利科学基金会;

关键词：

nanowires; rare earths; silicide; electronic structure; one-dimensional metallicity; N-TYPE SI(111); FLAT-BAND CONDITIONS; TUNNELING-MICROSCOPY; SURFACE; SPECTROSCOPY; GROWTH; WIRES; RECONSTRUCTIONS; MONOLAYERS; SYSTEM;

D O I：

10.1088/1367-2630/18/11/113005

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The electronic structure of Tb silicide nanowires on planar and vicinal Si(001) surfaces was investigated using scanning tunneling spectroscopy, core-level photoemission spectroscopy, and angle-resolved photoemission spectroscopy. The nanowires are metallic and their formation results in a band bending corresponding almost to flatband conditions on n-type substrates. The chemical core-level shifts of the Si-2p spectral components of the nanowires are independent of the substrate offcut indicating the growth of identical nanowire structures. Using vicinal surfaces a single-domain growth of nanowires is possible, enabling the differentiation of the electronic band structure parallel and perpendicular to the nanowires. In this way, five quasi one-dimensional bands crossing or reaching the Fermi level are found.

引用

页数：16

共 51 条

[1] Capping of rare earth silicide nanowires on Si(001) [J].

Appelfeller, Stephan ;

Franz, Martin ;

Kubicki, Milan ;

Reiss, Paul ;

Niermann, Tore ;

Schubert, Markus Andreas ;

Lehmann, Michael ;

Daehne, Mario .

APPLIED PHYSICS LETTERS, 2016, 108 (01)

[2] Tb silicide nanowire growth on planar and vicinal Si(001) surfaces [J].

Appelfeller, Stephan ;

Kuls, Stefan ;

Daehne, Mario .

SURFACE SCIENCE, 2015, 641 :180-190

[3] Evidence for Long-Range Spin Order Instead of a Peierls Transition in Si(553)-Au Chains [J].

Aulbach, J. ;

Schaefer, J. ;

Erwin, S. C. ;

Meyer, S. ;

Loho, C. ;

Settelein, J. ;

Claessen, R. .

PHYSICAL REVIEW LETTERS, 2013, 111 (13)

[4] ALKALI ADSORPTION ON GAAS(110) - ATOMIC-STRUCTURE, ELECTRONIC STATES AND SURFACE DIPOLES [J].

BECHSTEDT, F ;

SCHEFFLER, M .

SURFACE SCIENCE REPORTS, 1993, 18 (5-6) :145-198

[5] Atomically controlled quantum chains hosting a Tomonaga-Luttinger liquid [J].

Blumenstein, C. ;

Schaefer, J. ;

Mietke, S. ;

Meyer, S. ;

Dollinger, A. ;

Lochner, M. ;

Cui, X. Y. ;

Patthey, L. ;

Matzdorf, R. ;

Claessen, R. .

NATURE PHYSICS, 2011, 7 (10) :776-780

[6]

Bulanova MV, 1999, Z METALLKD, V90, P216

[7]

Chandola S, 2016, UNPUB

[8] Self-assembled growth of epitaxial erbium disilicide nanowires on silicon (001) [J].

Chen, Y ;

Ohlberg, DAA ;

Medeiros-Ribeiro, G ;

Chang, YA ;

Williams, RS .

APPLIED PHYSICS LETTERS, 2000, 76 (26) :4004-4006

[9] Nanowires of four epitaxial hexagonal silicides grown on Si(001) [J].

Chen, Y ;

Ohlberg, DAA ;

Williams, RS .

JOURNAL OF APPLIED PHYSICS, 2002, 91 (05) :3213-3218

[10] Thulium induced reconstructions of the Si(001) surface [J].

Cui, Y. ;

Nogami, J. .

SURFACE SCIENCE, 2011, 605 (23-24) :2038-2044

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