Bias voltage modulated resistance states in small-area Fe70Ga30 films on ferroelectric Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3TiO3) films

被引：4

作者：

Tao, Zhi ^{[1
]}

Han, Yemei ^{[1
]}

Ren, Xianming ^{[1
]}

Li, Hui ^{[1
]}

Wang, Fang ^{[1
]}

Zhang, Kailiang ^{[1
]}

机构：

[1] Tianjin Univ Technol, Tianjin Key Lab Film Elect & Commun Devices, Sch Elect & Informat Engn, Tianjin 300384, Peoples R China

来源：

THIN SOLID FILMS | 2020年 / 709卷

基金：

中国国家自然科学基金;

关键词：

Ferroelectrics; Ferromagnetic materials; Barium zirconate titanate; Barium calcium titanate; Iron-gallium; Resistance state; LEAD-FREE; MEMORY; MAGNETORESISTANCE; TRANSPORT;

D O I：

10.1016/j.tsf.2020.138241

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work, composite films consisting of small-area Fe70Ga30 (FeGa) on [Ba(Zr0.2Ti0.8)O-3]-0.5(Ba0.7Ca0.3TiO3) (BZT-0.5BCT) films were deposited on Pt/Ti/SiO2/Si substrates. Tetragonal perovskite crystalline phase of BZT-0.5BCT films was obtained and the films possess uniform and ordered ferroelectric domain structures. Ferroelectric hysteresis loop and displacement voltage butterfly loop of BZT-0.5BCT films are studied. The results show that BZT-0.5BCT films exhibit good piezoelectric properties with displacement up to 64.2 angstrom. The BZT-0.5BCT/FeGa composite films exhibit well defined magnetic hysteresis loop with a coercive field of 3.8 kA/m. The current-voltage (I-V) curves are examined and the I-V behaviors of FeGa films on BZT-0.5BCT films could be modulated by applying bias voltages, which gives rise to remarkable bias voltage controlled resistance switching behaviors, a maximum resistance change of 79.8% was obtained with a bias voltage of 0.5 V.

引用

页数：5

共 30 条

[1] Structural, Electronic, and Magnetic Analysis and Device Characterization of Ferroelectric-Ferromagnetic Heterostructure (BZT-BCT/LSMO/LAO) Devices for Multiferroic Applications [J].