Design Considerations and Testing of Virtual Frisch-Grid CdZnTe Detector Arrays Using the H3D ASIC

被引:8
作者
Bolotnikov, Aleksey E. [1 ]
Butcher, Jamie [2 ]
Camarda, Giuseppe S. [1 ]
Cui, Yonggang [1 ]
De Geronimo, Gianluigi [1 ]
Fried, Jack [1 ]
Fochuk, P. M. [3 ]
Hossain, Anwar [1 ]
Kim, Kihyun H. [1 ]
Kopach, O. V. [3 ]
Mahler, G. [1 ]
Marshall, Matthew [4 ]
McCall, B. [5 ]
Petryk, Matthew [1 ]
Vernon, Emerson [1 ]
Yang, Ge. [1 ]
James, Ralph B. [1 ]
机构
[1] Brookhaven Natl Lab, Upton, NY 11793 USA
[2] SUNY Coll Geneseo, Geneseo, NY 14454 USA
[3] Chernivtsi Natl Univ, UA-58000 Chernovtsy, Ukraine
[4] Univ New Mexico, Albuquerque, NM 87131 USA
[5] Alabama A&M Univ, Huntsville, AL 35810 USA
关键词
CdZnTe; charge-loss correction; crystal defects; virtual Frisch grid detectors; READOUT; PERFORMANCE; DEFECTS;
D O I
10.1109/TNS.2013.2274054
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We discussed the design implementation and results from testing 2 x 2-, 3 x 3-, and 2 x 4-arrays of 6 x 6 x 15 mm(3) CdZnTe virtual Frisch-grid detectors. In these measurements we employed a data acquisition system based on the H3D ASIC developed by BNL's Instrumentation Division in collaboration with the University of Michigan for 3D position-sensitive detectors. We used CZT crystals with a range of performance attributes to evaluate practical array configurations and detector-assembling procedures. The detector ratings were assigned based on the pulse-height spectra and correlated with data from X-ray diffraction topography measurements and X-ray response mapping obtained at BNL's National Synchrotron Light Source. The results helped us to better understand the performance limits of these detectors, and to identify future improvements in the array's design and requirements for the new readout ASIC.
引用
收藏
页码:2875 / 2882
页数:8
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