Structural and Magnetic Properties of Sputter-Deposited Polycrystalline Ni-Mn-Ga Ferromagnetic Shape-Memory Thin Films

被引：7

作者：

Kumar, S. Vinodh ^{[1
]}

Seenithurai, S. ^{[1
]}

Raja, M. Manivel ^{[2
]}

Mahendran, M. ^{[1
]}

机构：

[1] Thiagarajar Coll Engn, Dept Phys, Smart Mat Lab, Madurai 625015, Tamil Nadu, India

[2] Def Met Res Lab, Hyderabad 500058, Andhra Pradesh, India

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2015年 / 44卷 / 10期

关键词：

Thin films; sputtering; microstructure; magnetic properties; MAGNETOMECHANICAL PROPERTIES; MARTENSITIC-TRANSFORMATION; NI2MNGA; ALLOY; BEHAVIOR; STRAIN; CRYSTALLIZATION; ORIENTATION; FABRICATION; GROWTH;

D O I：

10.1007/s11664-015-3819-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Polycrystalline Ni-Mn-Ga ferromagnetic shape-memory thin films have been deposited on Si (100) substrates using a direct-current magnetron sputtering technique. The microstructure and the temperature dependence of magnetic properties of the films have been investigated by x-ray diffraction, scanning electron microscopy, and thermomagnetic measurements. As-deposited Ni50.2Mn30.6Ga19.2 film showed quasi-amorphous structure with paramagnetic nature at room temperature. When annealed at 873 K, the quasi-amorphous film attained crystallinity and possessed L2(1) cubic ordering with high magnetic transition temperature. Saturation magnetization and coercivity values for the annealed film were found to be 220 emu/cm(3) and 70 Oe, respectively, indicating soft ferromagnetic character with low magnetocrystalline anisotropy. The magnetic transitions of the film deposited at 100 W were above room temperature, making this a potential candidate for use in microelectromechanical system devices.

引用

页码：3761 / 3767

页数：7

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