Structural and Magnetic Properties of Sputter-Deposited Polycrystalline Ni-Mn-Ga Ferromagnetic Shape-Memory Thin Films

被引：7
作者：
Kumar, S. Vinodh [1 ]
Seenithurai, S. [1 ]
Raja, M. Manivel [2 ]
Mahendran, M. [1 ]
机构：
[1] Thiagarajar Coll Engn, Dept Phys, Smart Mat Lab, Madurai 625015, Tamil Nadu, India
[2] Def Met Res Lab, Hyderabad 500058, Andhra Pradesh, India
来源：
JOURNAL OF ELECTRONIC MATERIALS | 2015年 / 44卷 / 10期
关键词：
Thin films; sputtering; microstructure; magnetic properties; MAGNETOMECHANICAL PROPERTIES; MARTENSITIC-TRANSFORMATION; NI2MNGA; ALLOY; BEHAVIOR; STRAIN; CRYSTALLIZATION; ORIENTATION; FABRICATION; GROWTH;
D O I：
10.1007/s11664-015-3819-0
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Polycrystalline Ni-Mn-Ga ferromagnetic shape-memory thin films have been deposited on Si (100) substrates using a direct-current magnetron sputtering technique. The microstructure and the temperature dependence of magnetic properties of the films have been investigated by x-ray diffraction, scanning electron microscopy, and thermomagnetic measurements. As-deposited Ni50.2Mn30.6Ga19.2 film showed quasi-amorphous structure with paramagnetic nature at room temperature. When annealed at 873 K, the quasi-amorphous film attained crystallinity and possessed L2(1) cubic ordering with high magnetic transition temperature. Saturation magnetization and coercivity values for the annealed film were found to be 220 emu/cm(3) and 70 Oe, respectively, indicating soft ferromagnetic character with low magnetocrystalline anisotropy. The magnetic transitions of the film deposited at 100 W were above room temperature, making this a potential candidate for use in microelectromechanical system devices.
引用
收藏
页码：3761 / 3767
页数：7
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