Geometric Principles of Surface Growth

被引:45
作者
Escudero, Carlos [1 ]
机构
[1] Consejo Super Invest Cient, Inst Matemat & Fis Fundamental, Madrid 28006, Spain
关键词
D O I
10.1103/PhysRevLett.101.196102
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
I introduce a new equation describing epitaxial growth processes. This equation is derived from a simple variational geometric principle and it has a straightforward interpretation in terms of continuum and microscopic physics. It is also able to reproduce the critical behavior already observed, mound formation and mass conservation, but however does not fit a divergence form as the most commonly spread models of conserved surface growth. This formulation allows me to connect the results of the dynamic renormalization group analysis with intuitive geometric principles, whose generic character may well allow them to describe surface growth and other phenomena in different areas of physics.
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页数:4
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