Sizable band gap in organometallic topological insulator

被引：3

作者：

Derakhshan, V. ^{[1
]}

Ketabi, S. A. ^{[1
]}

机构：

[1] Damghan Univ, Sch Phys, POB 36716-41167, Damghan, Iran

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2017年 / 85卷

关键词：

Spin-orbit interaction; Organometallic lattice; Topological insulator; Edge states; Density functional theory; SPIN HALL INSULATOR; EDGE STATES; QUANTUM;

D O I：

10.1016/j.physe.2016.09.003

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Based on first principle calculation when Ceperley-Alder and Perdew-Burke-Ernzerh type exchange correlation energy functional were adopted to LSDA and GGA calculation, electronic properties of organometallic honeycomb lattice as a two-dimensional topological insulator was calculated. In the presence of spin-orbit interaction bulk band gap of organometallic lattice with heavy metals such as Au, Hg, Pt and TI atoms were investigated. Our results show that the organometallic topological insulator which is made of Mercury atom shows the wide bulk band gap of about similar to 120 meV. Moreover, by fitting the conduction and valence bands to the band-structure which are produced by Density Functional Theory, spin-orbit interaction parameters were extracted. Based on calculated parameters, gapless edge states within bulk insulating gap are indeed found for finite width strip of two-dimensional organometallic topological insulators. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：253 / 258

页数：6

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