Modeling of 3-D planar conducting structures on lossy silicon substrate in high frequency integrated circuits

被引：0

作者：

Zheng, J ^{[1
]}

Li, JP ^{[1
]}

Weisshaar, A ^{[1
]}

机构：

[1] Oregon State Univ, Dept Elect & Comp Engn, Corvallis, OR 97331 USA

来源：

2001 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 2001年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes simple yet accurate models for 3-D planar conducting structures such as substrate contacts and bond pads in high frequency and mixed-signal integrated circuits on lossy silicon substrate. The modeling approach is based on a rigorous 3-D EM characterization followed by equivalent circuit model extraction. The simple equivalent circuit models for coupled conducting structures are based on the physical structure. The frequency response of the models shows good agreement with the EM solution.

引用

页码：1265 / 1268

页数：4

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