InAlGaN/GaN-HEMT Device Technologies for W-band High-Power Amplifier

被引：0

作者：

Makiyama, K. ^{[1
]}

Ozaki, S. ^{[1
]}

Niida, Y. ^{[1
]}

Ohki, T. ^{[1
]}

Okamoto, N. ^{[1
]}

Minoura, Y. ^{[1
]}

Sato, M. ^{[1
]}

Kamada, Y. ^{[1
]}

Joshin, K. ^{[1
]}

Watanabe, K. ^{[1
]}

Miyamoto, Y. ^{[2
]}

机构：

[1] Fujitsu Labs Ltd, 10-1 Morinosato Wakamiya, Atsugi, Kanagawa 2430197, Japan

[2] Tokyo Inst Technol, Dept Elect & Elect Engn, Tokyo 1528552, Japan

来源：

PROCEEDINGS OF THE 25TH BIENNIAL LESTER EASTMAN CONFERENCE ON HIGH PERFORMANCE DEVICES (LEC) | 2016年

关键词：

HEMTs; Millimeter wave devices; Millimeter wave transistors; Amplifier; MMICs; Wireless communication; GaN; InAlGaN;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrated an excellent output power (Pout) density performance using a novel InAlGaN/GaN-HEMT with an 80-nm gate for a W-band amplifier. To eliminate current collapse, a unique double-layer silicon nitride (SiN) passivation film with oxidation resistance was adopted. The developed discrete GaN-HEMT achieved a Pout density of 3.0 W/mm at 96 GHz, and we fabricated W-band amplifier MMIC using the air-bridge wiring technology. The Pout density of the MMIC reached 3.6 W/mm at 86 GHz. We proved the potential of the developed InAlGaN/GaN-HEMT experimentally using our unique device technology. With the aim of future applications, we developed a novel wiring-inter-layer technology. It consists of a cavity structure and a moisture-resistant dielectric film technology. We demonstrated excellent high-frequency performances and low current collapse originating in humidity-degradation using AlGaN/GaN-HEMT. This is also a valuable technology for InAlGaN/GaN-HEMT.

引用

页码：31 / 34

页数：4

共 15 条

[1]

Brown Andrew, 2011, IEEE MTT S IMS DIGES

[2]

Brown D. F., 2011, IEDM, P461

[3] Power electronics on InAlN/(In)GaN:: Prospect for a record performance [J].

Kuzmík, J .

IEEE ELECTRON DEVICE LETTERS, 2001, 22 (11) :510-512

[4] 300-GHz InAlN/GaN HEMTs With InGaN Back Barrier [J].

Lee, Dong Seup ;

Gao, Xiang ;

Guo, Shiping ;

Kopp, David ;

Fay, Patrick ;

Palacios, Tomas .

IEEE ELECTRON DEVICE LETTERS, 2011, 32 (11) :1525-1527

[5]

Makiyama K., 2014, LEC2014, pS5

[6]

Makiyama K., 2003, IEDM, P727

[7]

Makiyama K., 2015, IEDM, P213

[8]

Makiyama K., 2011, PHYS STATUS SOLIDI C, V8, P2422

[9]

Micovic M., 2012, IEEE MTT S IMS DIG

[10]

Niida Y., 2016, 2016 IEEE TROP C RF

← 1 2 →