Electron drift-mobility measurements in polycrystalline CuIn1-xGaxSe2 solar cells

被引：23

作者：

Dinca, S. A. ^{[1
]}

Schiff, E. A. ^{[1
]}

Shafarman, W. N. ^{[2
]}

Egaas, B. ^{[3
]}

Noufi, R. ^{[3
]}

Young, D. L. ^{[3
]}

机构：

[1] Syracuse Univ, Dept Phys, Syracuse, NY 13244 USA

[2] Univ Delaware, Inst Energy Convers, Newark, DE 19716 USA

[3] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 10期

关键词：

EFFICIENCY LIMITATIONS;

D O I：

10.1063/1.3692165

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report photocarrier time-of-flight measurements of electron drift mobilities for the p-type CuIn1-xGaxSe2 films incorporated in solar cells. The electron mobilities range from 0.02 to 0.05 cm(2)/Vs and are weakly temperature-dependent from 100-300 K. These values are lower than the range of electron Hall mobilities (2-1100 cm(2)/Vs) reported for n-type polycrystalline thin films and single crystals. We propose that the electron drift mobilities are properties of disorder-induced mobility edges and discuss how this disorder could increase cell efficiencies. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3692165]

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页数：3

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