Doping of Bi2Te3 using electron irradiation

被引：17
|
作者：
Rischau, C. W. [1 ]
Leridon, B. [2 ]
Fauque, B. [2 ]
Metayer, V. [1 ]
van der Beek, C. J. [1 ]
机构：
[1] Ecole Polytech, CNRS CEA DSM IRAMIS, Solides Irradies Lab, F-91128 Palaiseau, France
[2] Ecole Super Phys & Chim Ind Ville Paris, UPMC CNRS, Lab Phys & Etud Mat, F-75005 Paris 05, France
来源：
PHYSICAL REVIEW B | 2013年 / 88卷 / 20期
关键词：
HIGHEST VALENCE-BAND; TOPOLOGICAL INSULATOR; BISMUTH TELLURIDE; MOBILITY CHANGES; SURFACE-STATES; PROTONS; DEFECTS; PHASE;
D O I：
10.1103/PhysRevB.88.205207
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Electron irradiation is investigated as a way to dope the topological insulator Bi2Te3. For this, p-type Bi2Te3 single crystals have been irradiated with 2.5 MeV electrons at room temperature and electrical measurements have been performed in situ as well as ex situ in magnetic fields up to 14 T. The defects created by irradiation act as electron donors, allowing the compensation of the initial hole-type conductivity of the material as well as the conversion of the conductivity from p to n type. The changes in carrier concentration are investigated using the Hall effect and Shubnikov-de Haas (SdH) oscillations, clearly observable in the p-type samples before irradiation, but also after the irradiation-induced conversion of the conductivity to n type. The SdH patterns observed for the magnetic field along the trigonal axis can be entirely explained assuming the contributions of only one valence and one conduction band, respectively, and Zeeman splitting of the orbital levels.
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页数：8
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