The Charge Plasma P-N Diode

被引：276

作者：

Hueting, Raymond J. E. ^{[1
]}

Rajasekharan, Bijoy ^{[1
]}

Salm, Cora ^{[1
]}

Schmitz, Jurriaan ^{[1
]}

机构：

[1] Univ Twente, Inst Nanotechnol, MESA, NL-7500 AE Enschede, Netherlands

来源：

IEEE ELECTRON DEVICE LETTERS | 2008年 / 29卷 / 12期

关键词：

Charge plasma (CP); current; MOS devices; semiconductor device modeling; simulation;

D O I：

10.1109/LED.2008.2006864

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A simulation study on a new rectifier concept is presented. This device basically consists of two gates with different workfunctions on top of a thin intrinsic or lowly doped silicon body. The workfunctions and layer thicknesses are chosen such that an electron plasma is formed on one side of the silicon body and a hole plasma on the other, i.e., a charge plasma p-n diode is formed in which no doping is required. Simulation results reveal a good rectifying behavior for well-chosen gate workfunctions and device dimensions. This concept could he applied for other semiconductor devices and materials as well in which doping is an issue.

引用

页码：1367 / 1369

页数：3

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