Photoemission study for Mg/Si(111)1x1 surface

被引：9
|
作者：
An, KS
Park, RJ
Kim, JS
Park, CY
Kim, CY
Chung, JW
Kinoshita, T
Kakizaki, A
机构：
[1] POHANG UNIV SCI & TECHNOL, DEPT PHYS, POHANG 790784, SOUTH KOREA
[2] UNIV TOKYO, INST SOLID STATE PHYS, SYNCHROTRON RADIAT LAB, TSKUBA BRANCH, TSUKUBA, IBARAKI 305, JAPAN
来源：
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA | 1996年 / 80卷
关键词：
D O I：
10.1016/0368-2048(96)02947-7
中图分类号：
O433 [光谱学];
学科分类号：
0703 ; 070302 ;
摘要：
The interface and silicide formation on Si(111)7x7 surface at 300 degrees C by Mg deposition was studied using low energy electron diffraction and synchrotron radiation photoelectron emission spectroscopy. At 300 degrees C only Mg/Si(111)1x1 structure was observed, which is different structure from the Mg/Si(111)1x1 surface formed at room temperature. A disordered Mg film was formed for further Mg deposition. We observed that the thin silicide layer between Mg film and Si substrate play a role as interdiffusion barrier for Mg atoms.
引用
收藏
页码：165 / 168
页数：4
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