Photoemission study for Mg/Si(111)1x1 surface

被引：9

作者：

An, KS

Park, RJ

Kim, JS

Park, CY

Kim, CY

Chung, JW

Kinoshita, T

Kakizaki, A

机构：

[1] POHANG UNIV SCI & TECHNOL, DEPT PHYS, POHANG 790784, SOUTH KOREA

[2] UNIV TOKYO, INST SOLID STATE PHYS, SYNCHROTRON RADIAT LAB, TSKUBA BRANCH, TSUKUBA, IBARAKI 305, JAPAN

来源：

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA | 1996年 / 80卷

关键词：

D O I：

10.1016/0368-2048(96)02947-7

中图分类号：

O433 [光谱学];

学科分类号：

0703 ; 070302 ;

摘要：

The interface and silicide formation on Si(111)7x7 surface at 300 degrees C by Mg deposition was studied using low energy electron diffraction and synchrotron radiation photoelectron emission spectroscopy. At 300 degrees C only Mg/Si(111)1x1 structure was observed, which is different structure from the Mg/Si(111)1x1 surface formed at room temperature. A disordered Mg film was formed for further Mg deposition. We observed that the thin silicide layer between Mg film and Si substrate play a role as interdiffusion barrier for Mg atoms.

引用

页码：165 / 168

页数：4

共 4 条

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