Charge transport mechanism in dielectrics: drift and diffusion of trapped charge carriers

被引:11
作者
Pil'nik, Andrey A. [1 ,2 ]
Chernov, Andrey A. [1 ,2 ]
Islamov, Damir R. [1 ,2 ]
机构
[1] Russian Acad Sci, Siberian Branch, Rzhanov Inst Semicond Phys, Novosibirsk 630090, Russia
[2] Novosibirsk State Univ, Novosibirsk 630090, Russia
基金
俄罗斯科学基金会;
关键词
ELECTRICAL-CONDUCTIVITY; NONVOLATILE MEMORY; CONSTANT; EMISSION; MODEL;
D O I
10.1038/s41598-020-72615-1
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
In this study, we developed a continuum theory of the charge transport in dielectrics by trapped electrons and holes, which takes into account two separate contributions of the current of trapped charge carriers: the drift part and the diffusion one. It was shown that drift current is mostly dominant in the bulk, while the diffusion one reaches significant values near contacts. A comparison with other theoretical models and experiments shows a good agreement. The model can be extended to two- and three-dimensional systems. The developed model, formulated in partial differential equations, can be numerically implemented in the finite element method code.
引用
收藏
页数:10
相关论文
共 38 条
  • [1] ELECTRONIC CONDUCTION THROUGH EVAPORATED SILICON OXIDE FILMS
    ADACHI, H
    SHIBATA, Y
    ONO, S
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (07) : 988 - &
  • [2] Comprehensive Study of Pi-Gate Nanowires Poly-Si TFT Nonvolatile Memory With an HfO2 Charge Trapping Layer
    Chen, Lun-Jyun
    Wu, Yung-Chun
    Chiang, Ji-Hong
    Hung, Min-Feng
    Chang, Chin-Wei
    Su, Po-Wen
    [J]. IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2011, 10 (02) : 260 - 265
  • [3] Stack engineering of TANOS charge-trap flash memory cell using high-κ ZrO2 grown by ALD as charge trapping layer
    Congedo, G.
    Lamperti, A.
    Lamagna, L.
    Spiga, S.
    [J]. MICROELECTRONIC ENGINEERING, 2011, 88 (07) : 1174 - 1177
  • [4] Dünkel S, 2017, INT EL DEVICES MEET
  • [5] Reformulation of the standard theory of Fowler-Nordheim tunnelling and cold field electron emission
    Forbes, Richard G.
    Deane, Jonathan H. B.
    [J]. PROCEEDINGS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 2007, 463 (2087): : 2907 - 2927
  • [6] Electron emission in intense electric fields
    Fowler, RH
    Nordheim, L
    [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-CONTAINING PAPERS OF A MATHEMATICAL AND PHYSICAL CHARACTER, 1928, 119 (781) : 173 - 181
  • [7] Frenkel J, 1938, PHYS REV, V54, P647, DOI 10.1103/PhysRev.54.647
  • [8] Frenkel J., 1938, TECH PHYS USSR, V5, P685
  • [9] Charge transport mechanism in periodic mesoporous organosilica low-k dielectric
    Gismatulin, A. A.
    Gritsenko, V. A.
    Seregin, D. S.
    Vorotilov, K. A.
    Baklanov, M. R.
    [J]. APPLIED PHYSICS LETTERS, 2019, 115 (08)
  • [10] Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells
    Goux, L.
    Czarnecki, P.
    Chen, Y. Y.
    Pantisano, L.
    Wang, X. P.
    Degraeve, R.
    Govoreanu, B.
    Jurczak, M.
    Wouters, D. J.
    Altimime, L.
    [J]. APPLIED PHYSICS LETTERS, 2010, 97 (24)