An ultrathin Zr(Ge) alloy film as an exhaustion interlayer combined with Cu(Zr) seed layer for the Cu/porous SiOC:H dielectric integration

被引：12

作者：

Liu, B. ^{[1
]}

Song, Z. X. ^{[1
]}

Li, Y. H. ^{[1
]}

Xu, K. W. ^{[1
]}

机构：

[1] Xian Jiaotong Univ, State Key Lab Mech Behav Mat, Xian 710049, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 17期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.3013565

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A highly reliable interface of an ultrathin Zr(Ge) exhaustion interlayer between Cu(Zr) film and porous SiOC:H (p-SiOC:H) dielectric has been developed in the present work. After being processed at a moderate elevated temperature (say, 450 degrees C), a self-formed nanomultilayer of CuGex/ZrOx(ZrSiyOx) was produced at the interface of Cu(Zr)/p-SiOC:H film stacks, which showed strong ability to effectively hinder Cu atoms diffusion into p-SiOC: H film and free Si atoms diffusion into Cu film. The mechanism involving the thermal stability of the films system is analyzed based on detailed characterization studies. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3013565]

引用

页数：3

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