The effect of resonant sublevel coupling on intersubband transitions in coupled double quantum wells

被引:10
作者
Hartung, M [1 ]
Wixforth, A [1 ]
Campman, KL [1 ]
Gossard, AC [1 ]
机构
[1] UNIV CALIF SANTA BARBARA,DEPT MAT,SANTA BARBARA,CA 93106
关键词
D O I
10.1016/0038-1101(95)00228-6
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The effect of resonant sublevel coupling on intersubband transitions in double quantum wells is investigated using far-infrared spectroscopy. We study widely tuneable parabolic double quantum wells in which potential spikes of different energetic height and thickness provide tunnel barriers for the electron systems on either side of the barrier. The use of gate electrodes enables us to tune both the carrier densities as well as the respective sublevel spacings and allow for a manifold degeneracy scheme like in an artificial molecule where the atomic number of both partners can be intentionally changed. Depending on the actual experimental condition, we observe pronounced level anticrossings into a symmetric and antisymmetric state. This single-particle sublevel coupling manifests itself in a rich spectrum of the observed collective intersubband transitions which occur at the depolarization shifted intersubband energy.
引用
收藏
页码:113 / 115
页数:3
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