Optimization of ICP-CVD Silicon Nitride for Si Solar Cell Passivation

被引：0
|
作者：
Sandee, S. S. [1 ]
Kottantharayil, Anil [1 ]
Wariko, Ketan [1 ]
机构：
[1] Indian Inst Technol, Natl Ctr Photovolta Res & Educ, Dept Elect Engn, Bombay 76, Maharashtra, India
来源：
2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2012年
关键词：
Hydrogen blistering; FTIR; Interface traps; Surface recombination velocity; Silicon nitride;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
We have carried out a feasibility study on using inductively coupled plasma CVD (ICP-CVD) based SiNx:H as an anti-reflective coating and for surface passivation of c-Si solar cells. It is seen that for certain range of gas flows the films showed blistering upon firing. Film deposition process was optimized to eliminate the blistering problem. Using extensive fourier transform infrared spectroscopy (FTIR) studies, it is shown that the blistering is due to release of hydrogen in the film and process optimization should target to achieve low hydrogen concentration. Optimized recipes with low interface state density and high positive charges were developed and surface recombination velocity of 1.9 cm/sec was obtained. .
引用
收藏
页码：1102 / 1104
页数：3
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