Preparation and characteristics of ZnO thin films deposited on glass substrates

被引:4
作者
Agyeman, O [1 ]
Xu, CN
Liu, Y
Akiyama, M
Zheng, XG
Suzuki, M
Harada, T
机构
[1] Natl Inst Adv Ind Sci & Technol, Tosu, Saga 8410052, Japan
[2] Saga Univ, Dept Phys, Saga 8408502, Japan
[3] Fukuoka Technol Ctr, Fukuoka, Japan
来源
ASIAN CERAMIC SCIENCE FOR ELECTRONICS I | 2002年 / 214-2卷
关键词
adhesion; thin film; etching; ZnO; crystallinity;
D O I
10.4028/www.scientific.net/KEM.214-215.193
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Zinc Oxide (ZnO) films were deposited onto etched and unetched glass substrates using RIF sputtering technique. Highly oriented ZnO thin films were successfully prepared on glass substrates under an optimized sputtering condition. It was found that the substrate etching greatly enhanced the film crystallinity and adherent strength of the ZnO thin films on glass substrates. In photoluminescence (PL) studies at room temperature for wavelengths between 350 nm and 640 nm, we have observed a single exciton peak around 380 nm and a very weak deep-level emission indicating that the concentration of defects responsible for the deep-level emission is low. X-ray diffraction, SEM and a Scratch Adhesion Tester were used to examine the film crystallinity and adhesion on the etched and unetched glass substrates.
引用
收藏
页码:193 / 197
页数:5
相关论文
共 30 条
  • [1] Room temperature excitonic stimulated emission from zinc oxide epilayers grown by plasma-assisted MBE
    Bagnall, DM
    Chen, YF
    Shen, MY
    Zhu, Z
    Goto, T
    Yao, T
    [J]. JOURNAL OF CRYSTAL GROWTH, 1998, 184 : 605 - 609
  • [2] Optically pumped lasing of ZnO at room temperature
    Bagnall, DM
    Chen, YF
    Zhu, Z
    Yao, T
    Koyama, S
    Shen, MY
    Goto, T
    [J]. APPLIED PHYSICS LETTERS, 1997, 70 (17) : 2230 - 2232
  • [3] LUMINESCENCE OF HETEROEPITAXIAL ZINC-OXIDE
    BETHKE, S
    PAN, H
    WESSELS, BW
    [J]. APPLIED PHYSICS LETTERS, 1988, 52 (02) : 138 - 140
  • [4] BUBE RH, 1979, J VAC SCI TECHNOL, V16, P995
  • [5] Plasma assisted molecular beam epitaxy of ZnO on c-plane sapphire: Growth and characterization
    Chen, YF
    Bagnall, DM
    Koh, HJ
    Park, KT
    Hiraga, K
    Zhu, ZQ
    Yao, T
    [J]. JOURNAL OF APPLIED PHYSICS, 1998, 84 (07) : 3912 - 3918
  • [6] HYDRIDE VAPOR-PHASE EPITAXIAL-GROWTH OF A HIGH-QUALITY GAN FILM USING A ZNO BUFFER LAYER
    DETCHPROHM, T
    HIRAMATSU, K
    AMANO, H
    AKASAKI, I
    [J]. APPLIED PHYSICS LETTERS, 1992, 61 (22) : 2688 - 2690
  • [7] THE GROWTH OF THICK GAN FILM ON SAPPHIRE SUBSTRATE BY USING ZNO BUFFER LAYER
    DETCHPROHM, T
    AMANO, H
    HIRAMATSU, K
    AKASAKI, I
    [J]. JOURNAL OF CRYSTAL GROWTH, 1993, 128 (1-4) : 384 - 390
  • [8] LUMINESCENT TRANSITIONS ASSOCIATED WITH DIVALENT COPPER IMPURITIES AND GREEN EMISSION FROM SEMICONDUCTING ZINC OXIDE
    DINGLE, R
    [J]. PHYSICAL REVIEW LETTERS, 1969, 23 (11) : 579 - &
  • [9] EPITAXIAL ZNO ON SAPPHIRE
    GALLI, G
    COKER, JE
    [J]. APPLIED PHYSICS LETTERS, 1970, 16 (11) : 439 - &
  • [10] HAASE M, 1988, J PHYS CHEM-US, V92, P630