Hydrostatic pressure effects on exciton states in InAs/GaAs quantum dots

被引：20
作者：
Xia, Congxin [1 ]
Jiang, Fengchun [2 ]
Wei, Shuyi [1 ]
机构：
[1] Henan Normal Univ, Dept Phys, Xinxiang 453007, Henan, Peoples R China
[2] Zhengzhou Univ Light Ind, Dept Technol & Phys, Zhengzhou 450002, Peoples R China
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2008年 / 43卷 / 04期
关键词：
quantum dot; exciton; hydrostatic pressure;
D O I：
10.1016/j.spmi.2007.12.001
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Based on the effective-mass approximation, the hydrostatic pressure effects on exciton states in InAs/GaAs self-assembled quantum dots (QDs) are studied by means of a variational method. Numerical results show that the exciton binding energy has a minimum with increasing dot height for any hydrostatic pressure. The interband emission energy increases when the hydrostatic pressure increases. In particular, we find that hydrostatic pressure has a remarkable effect on exciton states for small QD size. Our results are in agreement with experiment measurements. (c) 2007 Elsevier Ltd. All rights reserved.
引用
收藏
页码：285 / 291
页数：7
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