Cross-linkable random copolymers as dielectrics for low-voltage organic field-effect transistors

被引:6
作者
Simas, E. Reis [1 ]
Kang, E. S. H. [1 ]
Gassmann, A. [1 ]
Katholing, E. [2 ]
Janietz, S. [2 ]
von Seggern, H. [1 ]
机构
[1] Tech Univ Darmstadt, Mat Sci & Geosci, D-64287 Darmstadt, Germany
[2] Fraunhofer Inst Appl Polymer Res, D-14476 Potsdam, Germany
关键词
THIN-FILM TRANSISTORS; POLYMER GATE DIELECTRICS; ELECTRONICS; INTERFACE; LINKING; SEMICONDUCTORS; INSULATORS; AZIDES; STATES; LAYERS;
D O I
10.1039/c5tc00352k
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A large number of cross-linkable dielectrics with good dielectric properties have been reported; however, all of them suffer from disadvantages like uncontrolled pre-crosslinking, necessity of high process temperatures and the need for an additional cross-linking compound. In this contribution, two new poly(methyl methacrylate) polymers are introduced which can be cross-linked due to the attached benzyl azide (N-3) monomer units making the addition of hardeners or initiators obsolete. The synthesis of the copolymers as well as their successful characterization and usage as gate dielectrics for organic field-effect transistors is demonstrated. The investigated polymers have been labeled PAZ 12 and PAZ 14 according to their azide content in mol%. The additional building blocks of the polymers are methyl methacrylate for PAZ 12 and methyl methacrylate and styrene monomer units in about an equal ratio for PAZ 14. Spin-coated thin films were cross-linked by a thermal treatment at 110 degrees C followed by an UV exposure at a wavelength of 254 nm yielding insoluble, smooth and electrically dense polymeric networks. Optimal cross-linking parameters were obtained using infrared spectroscopy to follow the N-3 vibrational mode. Its disappearance confirms a complete cross-linking reaction, and thus fully reacted azide groups facilitate the analytics. The dielectric properties of the cross-linked thin films have been studied by impedance spectroscopy. The application of double layer dielectrics results in lower dielectric losses and lower leakage currents in the subsequently produced pentacene-based field-effect transistors. These devices operate at voltages below -6 V and show hysteresis-free current-voltage characteristics with hole mobilities up to 0.16 cm(2) V-1 s(-1). PAZ 12 appears to be superior to PAZ 14 due to a lower total layer thickness of down to 92 nm still providing good insulation in the transistor presumably related to a lower free volume that arises in the cross-linked network of the two-component containing copolymer PAZ 12.
引用
收藏
页码:9217 / 9223
页数:7
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