Synthesis and electronic structure of nitrogen-doped graphene

被引:33
作者
Usachov, D. Yu. [1 ]
Fedorov, A. V. [1 ]
Vilkov, O. Yu. [1 ]
Senkovskiy, B. V. [1 ]
Adamchuk, V. K. [1 ]
Andryushechkin, B. V. [2 ]
Vyalikh, D. V. [1 ,3 ]
机构
[1] St Petersburg State Univ, St Petersburg 199034, Russia
[2] Russian Acad Sci, Prokhorov Gen Phys Inst, Moscow 119991, Russia
[3] Tech Univ Dresden, Inst Festkorperphys, D-01069 Dresden, Germany
基金
俄罗斯基础研究基金会;
关键词
CHEMICAL-VAPOR-DEPOSITION; CARBON NANOTUBES; FILMS; MONOLAYER; NITRIDE; GROWTH; GRAPHITE;
D O I
10.1134/S1063783413060310
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The crystalline and electronic structure of nitrogen-doped graphene (N-graphene) has been studied by photoelectron spectroscopy and scanning tunneling microscopy. Synthesis of N-graphene from triazine molecules on Ni(111) surface results in incorporation into graphene of nitrogen atoms primarily in the pyridinic configuration. It has been found that inclusions of nitrogen enhance significantly thermal stability of graphene on nickel. An analysis of the electronic structure of N-graphene intercalated by gold atoms has revealed that the pyridinic nitrogen culminates in weak p-type doping, in full agreement with theoretical predictions. Subsequent thermal treatment makes possible conversion of the major part of nitrogen atoms into the substitutional configuration, which involves n-type doping. It has been shown that the crystalline structure of the N graphene thus obtained reveals local distortions presumably caused by inhomogeneous distribution of impurities in the layer. The results obtained have demonstrated a promising application potential of this approach for development of electronic devices based on graphene with controllable type of conduction and carrier concentration.
引用
收藏
页码:1325 / 1332
页数:8
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