Fabrication aspects of germanium on insulator from sputtered Ge on Si-substrates

被引：39
作者：
Balakumar, S
Roy, MM
Ramamurthy, B
Tung, CH
Fei, G
Tripathy, S
Chi, DZ
Kumar, R
Balasubramanian, N
Kwong, DL
机构：
[1] Inst Microelect, Singapore 117685, Singapore
[2] Inst Mat Res & Engn, Singapore 117602, Singapore
[3] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore
来源：
ELECTROCHEMICAL AND SOLID STATE LETTERS | 2006年 / 9卷 / 05期
关键词：
D O I：
10.1149/1.2179188
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Germanium (Ge) metal-oxide-semiconductor-field-effect transistors (MOSFETs) have higher carrier mobilities than Si. We have studied the growth of high quality single-crystal germanium on insulator (GOI) using rapid liquid-phase epitaxial growth and defect-necking techniques. Stable single-crystal Ge growth was seen at a temperature of 925 degrees C, below the melting point of Ge. At and above the Ge melting temperature, we found Ge segregating into balls. Defect-free crystals were grown from the semisolid state of Ge. The defect-necking technique was improved with an underlying insulator undercut to minimize dislocation or stacking faults. Up to 60 mu m long crystal-on-insulators were grown. Strain analysis of grown Ge was studied using Raman spectroscopy, and grown films were found to have tensile strain. (c) 2006 The Electrochemical Society.
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页码：G158 / G160
页数：3
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