High-gain injection quantum-dot lasers operating at wavelengths above 1300 nm

被引：2

作者：

Novikov, I. I. ^{[1
]}

Gordeev, N. Yu.

Maksimov, M. V.

Zhukov, A. E.

Shernyakov, Yu. M.

Ustinov, V. M.

Kryzhanovskaya, N. V.

Payusov, A. S.

Krestnikov, I. L.

Lifshits, D. A.

Mikhrin, S. S.

Kovsh, A. R.

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2008年 / 34卷 / 12期

关键词：

78.20.Bh; 85.60.-q; 85.60.Bt; 85.60.Jb; 42.70.Qs; 42.60.By;

D O I：

10.1134/S1063785008120055

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have created and studied the properties of semiconductor lasers on InAs/GaAs quantum dots with a maximum modal gain of 46 cm(-1) at a wavelength of 1325 nm achieved due to increased optical confinement factor and optimized heterostructure growth parameters. In a wavelength interval of 1315-1345 nm, the modal gain exceeded 20 cm(-1) at a current density of 500 A/cm(2).

引用

页码：1008 / 1010

页数：3

共 4 条

[1] Laser charaderistics of 1.3-μm quantum dots laser with high-density quantum dots
Amano, T.
Aoki, S.
Sugaya, T.
Komori, Kazuhiro
Okada, Y.
[J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2007, 13 (05) : 1273 - 1278
[2] CW DEGRADATION AT 300 DEGREES K OF GAAS DOUBLE-HETEROSTRUCTURE JUNCTION LASERS .2. ELECTRONIC GAIN
HAKKI, BW
PAOLI, TL
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) : 4113 - 4119
[3] MAXIMOV MV, 2004, DEKKER ENCY NANOSCIE
[4] Enhanced modal gain of multilayer InAs/InGaAs/GaAs quantum dot lasers emitting at 1300 nm
Salhi, A.
Fortunato, L.
Martiradonna, L.
Cingolani, R.
De Vittorio, M.
Passaseo, A.
[J]. JOURNAL OF APPLIED PHYSICS, 2006, 100 (12)

← 1 →