Design and Analysis of Tunable Analog Circuit Using Double Gate MOSFET at 45nm CMOS Technology

被引：0

作者：

Kushwah, Ravindra Singh ^{[1
]}

Akashe, Shyam ^{[2
]}

机构：

[1] ITM Univ, Gwalior, MP, India

[2] ITM Univ, Dept Elect Instrumentat, Gwalior, MP, India

来源：

PROCEEDINGS OF THE 2013 3RD IEEE INTERNATIONAL ADVANCE COMPUTING CONFERENCE (IACC) | 2013年

关键词：

Analog Tunable Circuits; DG MOSFET; Phase; Gain;

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

In this paper, we included designing of low power tunable analog circuits using double gate (DG) MOSFET, where the front gate output is changed by control voltage on the back gate. The DG devices can be used to improve the performance and reduce the power dissipation when front gate and back gate both are independently controlled. In this paper, we included the analysis of the analog tunable circuits such as CMOS Amplifier pair, Schmitt Trigger circuit and Operational trans-conductance Amplifier. Gain, phase and output response of analog tunable circuits have been illustrated in the paper. These circuit blocks are used for low-noise high-performance integrated circuits for analog and mixed-signal applications. The simulation results are predicted by Cadence Virtuoso Tool in 45nm complementary metal oxide semiconductor (CMOS) Technology.

引用

页码：1589 / 1594

页数：6

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