Low-Power Gate Driver Circuit for TFT-LCD Application

被引：34

作者：

Lin, Chih-Lung ^{[1
,2
]}

Tu, Chun-Da ^{[2
]}

Wu, Chia-En ^{[2
]}

Hung, Chia-Che ^{[2
]}

Gan, Kwang-Jow ^{[3
]}

Chou, Kuan-Wen ^{[2
]}

机构：

[1] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

[3] Natl Chiayi Univ, Dept Elect Engn, Chiayi 60004, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2012年 / 59卷 / 05期

关键词：

Gate driver circuit; power consumption; threshold voltage shift (Delta V-TH); DEPENDENCE;

D O I：

10.1109/TED.2012.2186966

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a novel low-power gate driver circuit fabricated from glass by using hydrogenated amorphous silicon (a-Si: H) technology and a standard five-mask process. The tolerance of the threshold voltage shift of the proposed gate driver circuit can be estimated as 30 V by using an H-SPICE simulator. Measurement results indicate that the rising and falling times of the output waveform are equal to those in the initial state. Moreover, the proposed gate driver circuit can operate reliably at a high temperature (T = 120 degrees C) for over 360 h. Furthermore, the proposed gate driver circuit reduces power consumption by 77.3% over that of a conventional gate driver circuit.

引用

页码：1410 / 1415

页数：6

共 16 条

[1] Level shifter embedded in drive circuits with amorphous silicon TFTs [J].

Bae, BS ;

Choi, JW ;

Oh, JH ;

Jang, J .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (03) :494-498

[2] a-Si robust gate driver for 7.0-in. WVGA LCD panel [J].

Chen, Hung-Chun ;

Chiang, Ko-Yu ;

Chen, Ming-Daw ;

Kung, Chen-Pang ;

Hou, Wei-Hsin .

2007 SID INTERNATIONAL SYMPOSIUM, DIGEST OF TECHNICAL PAPERS, VOL XXXVIII, BOOKS I AND II, 2007, 38 :222-225

[3] Highly Reliable Amorphous Silicon Gate Driver Using Stable Center-Offset Thin-Film Transistors [J].

Choi, Jae Won ;

Kim, Jae Ik ;

Kim, Se Hwan ;

Jang, Jin .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2010, 57 (09) :2330-2334

[4] Threshold voltage instability of amorphous silicon thin-film transistors under constant current stress [J].

Jahinuzzaman, SM ;

Sultana, A ;

Sakariya, K ;

Servati, P ;

Nathan, A .

APPLIED PHYSICS LETTERS, 2005, 87 (02)

[5]

Jang Y.-H., 2012, SID S DIG TECH PAPER, V37, P208, DOI [10.1889/1.2433455, DOI 10.1889/1.2433455]

[6] Instability of integrated shift register circuits using hydrogenated amorphous silicon thin film transistors [J].

Jang, Yong Ho .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (9A) :6806-6811

[7] Drain-bias dependence of threshold voltage stability of amorphous silicon TFTs [J].

Karim, KS ;

Nathan, A ;

Hack, M ;

Milne, WI .

IEEE ELECTRON DEVICE LETTERS, 2004, 25 (04) :188-190

[8]

Kim C. H., 2005, P SID, P939

[9]

Koo JH, 2007, J KOREAN PHYS SOC, V50, pL933, DOI 10.3938/jkps.50.933

[10] BIAS-STRESS-INDUCED STRETCHED-EXPONENTIAL TIME-DEPENDENCE OF CHARGE INJECTION AND TRAPPING IN AMORPHOUS THIN-FILM TRANSISTORS [J].

LIBSCH, FR ;

KANICKI, J .

APPLIED PHYSICS LETTERS, 1993, 62 (11) :1286-1288

← 1 2 →