Hydrogen-Terminated Diamond Field-Effect Transistors With Cutoff Frequency of 53 GHz

被引：94

作者：

Russell, Stephen A. O. ^{[1
]}

Sharabi, Salah ^{[1
]}

Tallaire, Alex ^{[2
]}

Moran, David A. J. ^{[1
]}

机构：

[1] Univ Glasgow, Sch Engn, Glasgow G12 8LT, Lanark, Scotland

[2] Univ Paris 13, LSPM CNRS, F-93430 Villetaneuse, France

来源：

IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 10期

基金：

英国工程与自然科学研究理事会;

关键词：

Field-effect transistor (FET); homoepitaxial diamond; hydrogen terminated; RF performance; PERFORMANCE; F(T); FETS;

D O I：

10.1109/LED.2012.2210020

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Homoepitaxial diamond has been used to demonstrate the RF performance of 50-nm gate length hydrogen-terminated diamond field-effect transistors. An extrinsic cutoff frequency of 53 GHz is achieved which we believe to be the highest value reported for a diamond-based transistor. The generation of an RF small signal equivalent circuit is used to extract device elements to better understand variation between intrinsic and extrinsic operation. An intrinsic cutoff frequency of 90 GHz is extracted through this process, verifying the requirement to minimize access resistance to maximize the potential high-frequency performance of this technology.

引用

页码：1471 / 1473

页数：3

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