Transition-Metal Substitution Doping in Synthetic Atomically Thin Semiconductors

被引：247

作者：

Gao, Jian ^{[1
]}

Kim, Young Duck ^{[2
]}

Liang, Liangbo ^{[3
,4
]}

Idrobo, Juan Carlos ^{[4
]}

Chow, Phil ^{[1
]}

Tan, Jiawei ^{[1
]}

Li, Baichang ^{[1
]}

Li, Lu ^{[5
]}

Sumpter, Bobby G. ^{[4
]}

Lu, Toh-Ming ^{[3
]}

Meunier, Vincent ^{[3
]}

Hone, James ^{[2
]}

Koratkar, Nikhil ^{[1
,5
]}

机构：

[1] Rensselaer Polytech Inst, Dept Mat Sci & Engn, 110 8th St, Troy, NY 12180 USA

[2] Columbia Univ, Dept Mech Engn, New York, NY 10027 USA

[3] Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, 110 8th St, Troy, NY 12180 USA

[4] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USA

[5] Rensselaer Polytech Inst, Dept Mech Aerosp & Nucl Engn, 110 8th St, Troy, NY 12180 USA

来源：

ADVANCED MATERIALS | 2016年 / 28卷 / 44期

基金：

美国国家科学基金会;

关键词：

P-N-JUNCTIONS; MONOLAYER MOS2; MOLYBDENUM-DISULFIDE; TRANSPORT-PROPERTIES; RES2; NANOSHEETS; BILAYER MOS2; WS2; PHOTOLUMINESCENCE; HETEROSTRUCTURES; DICHALCOGENIDES;

D O I：

10.1002/adma.201601104

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Large-area "in situ" transition-metal substitution doping for chemical-vapor-deposited semiconducting transition-metal-dichalcogenide monolayers deposited on dielectric substrates is demonstrated. In this approach, the transition-metal substitution is stable and preserves the monolayer's semiconducting nature, along with other attractive characteristics, including direct-bandgap photoluminescence.

引用

页码：9735 / +

页数：10

共 50 条

[1] Intrinsic Electronic Transport Properties of High-Quality Monolayer and Bilayer MoS2 [J].

Baugher, Britton W. H. ;

Churchill, Hugh O. H. ;

Yang, Yafang ;

Jarillo-Herrero, Pablo .

NANO LETTERS, 2013, 13 (09) :4212-4216

[2] Resolving surface chemical states in XPS analysis of first row transition metals, oxides and hydroxides: Sc, Ti, V, Cu and Zn [J].

Biesinger, Mark C. ;

Lau, Leo W. M. ;

Gerson, Andrea R. ;

Smart, Roger St. C. .

APPLIED SURFACE SCIENCE, 2010, 257 (03) :887-898

[3] Population inversion and giant bandgap renormalization in atomically thin WS2 layers [J].

Chernikov, Alexey ;

Ruppert, Claudia ;

Hill, Heather M. ;

Rigosi, Albert F. ;

Heinz, Tony F. .

NATURE PHOTONICS, 2015, 9 (07) :466-U69

[4] Exciton Binding Energy and Nonhydrogenic Rydberg Series in Monolayer WS2 [J].

Chernikov, Alexey ;

Berkelbach, Timothy C. ;

Hill, Heather M. ;

Rigosi, Albert ;

Li, Yilei ;

Aslan, Ozgur Burak ;

Reichman, David R. ;

Hybertsen, Mark S. ;

Heinz, Tony F. .

PHYSICAL REVIEW LETTERS, 2014, 113 (07)

[5] Wetting of Mono and Few-Layered WS2 and MoS2 Films Supported on Si/SiO2 Substrates [J].

Chow, Philippe K. ;

Singh, Eklavya ;

Viana, Bartolomeu Cruz ;

Gao, Jian ;

Luo, Jian ;

Li, Jing ;

Lin, Zhong ;

Elias, Ana L. ;

Shi, Yunfeng ;

Wang, Zuankai ;

Terrones, Mauricio ;

Koratkar, Nikhil .

ACS NANO, 2015, 9 (03) :3023-3031

[6] Defect-Induced Photoluminescence in Mono layer Semiconducting Transition Metal Dichalcogenides [J].

Chow, Philippe K. ;

Jacobs-Gedrim, Robin B. ;

Gao, Jian ;

Lu, Toh-Ming ;

Yu, Bin ;

Terrones, Humberto ;

Koratkar, Nikhil .

ACS NANO, 2015, 9 (02) :1520-1527

[7] High Mobility WSe2 p- and n-Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts [J].

Chuang, Hsun-Jen ;

Tan, Xuebin ;

Ghimire, Nirmal Jeevi ;

Perera, Meeghage Madusanka ;

Chamlagain, Bhim ;

Cheng, Mark Ming-Cheng ;

Yan, Jiaqiang ;

Mandrus, David ;

Tomanek, David ;

Zhou, Zhixian .

NANO LETTERS, 2014, 14 (06) :3594-3601

[8]

Cui X, 2015, NAT NANOTECHNOL, V10, P534, DOI [10.1038/nnano.2015.70, 10.1038/NNANO.2015.70]

[9] Possible doping strategies for MoS2 monolayers: An ab initio study [J].

Dolui, Kapildeb ;

Rungger, Ivan ;

Das Pemmaraju, Chaitanya ;

Sanvito, Stefano .

PHYSICAL REVIEW B, 2013, 88 (07)

[10]

Duan XD, 2014, NAT NANOTECHNOL, V9, P1024, DOI [10.1038/NNANO.2014.222, 10.1038/nnano.2014.222]

← 1 2 3 4 5 →