The study of substrate material for deposited titanium nitride thin film and its influence

被引:4
作者
Fu, Shuying [1 ]
机构
[1] Hanshan Normal Univ, Dept Phys & Elect Engn, Chaozhou 521041, Guangdong, Peoples R China
来源
EIGHTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS | 2013年 / 9068卷
关键词
TiNx thin films; Magnetron sputtering; substrate; LAYER; TIN;
D O I
10.1117/12.2053929
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In the paper, the TiNx thin film was prepared with two substrate Si-p(111) and Si-p(100) by dc reactive magnetron sputtering method and their performance was studied. The results show that the XRD diffraction peak with Small number, peak shape Octavia is not overlapping with TiNx diffraction peak for TiNx thin film with p-si(111) substrate. But, the film is of preferred orientation for (200). And all these were responsible for analysis of TiNx thin film growth on its structure and crystalline. Therefore, the deposition of TiNx thin film is appropriate for p-si(111) substrate. It can meet the requirements of the preparation of optical thin film quality.
引用
收藏
页数:4
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