Reversible switching of charge injection barriers at metal/organic-semiconductor contacts modified with structurally disordered molecular monolayers

被引：15

作者：

Nouchi, Ryo ^{[1
,2
,3
]}

Shigeno, Masanori ^{[4
]}

Yamada, Nao ^{[3
]}

Nishino, Tomoaki ^{[1
]}

Tanigaki, Katsumi ^{[2
,3
]}

Yamaguchi, Masahiko ^{[2
,4
]}

机构：

[1] Osaka Prefecture Univ, Nanosci & Nanotechnol Res Ctr, Sakai, Osaka 5998570, Japan

[2] Tohoku Univ, WPI Adv Inst Mat Res, Sendai, Miyagi 9808577, Japan

[3] Tohoku Univ, Grad Sch Sci, Dept Phys, Sendai, Miyagi 9808578, Japan

[4] Tohoku Univ, Grad Sch Pharmaceut Sci, Dept Organ Chem, Sendai, Miyagi 9808578, Japan

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 01期

基金：

日本科学技术振兴机构;

关键词：

SELF-ASSEMBLED MONOLAYERS; FIELD-EFFECT TRANSISTORS; METAL-SURFACES; ELECTRODES; ENERGY; AU(111); GROWTH; HELIX;

D O I：

10.1063/1.4861164

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Metal/semiconductor interfaces govern the operation of semiconductor devices through the formation of charge injection barriers that can be controlled by tuning the metal work function. However, the controlling ability is typically limited to being static. We show that a dynamic nature can be imparted to the interfaces using electrode surface modification with a structurally disordered molecular monolayer. The barrier height at the interfaces is altered significantly in a reversible way by an external electric field. As a result, a dramatic change in the carrier transport properties through the interfaces is observed, such as a reversible polarity reversion of metal/organic-semiconductor/metal diodes. (C) 2014 AIP Publishing LLC.

引用

页数：5

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