Two-dimensional dopant profiling of ultrashallow junction with off-axis electron holography: A round robin experiment

被引:1
作者
Frost, BG [1 ]
Thesen, A
Joy, DC
Foran, B
Brand, K
机构
[1] Univ Tennessee, EM Facil, Knoxville, TN 37996 USA
[2] Int SEMATECH, Austin, TX USA
[3] Tech Univ Dresden, D-01062 Dresden, Germany
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2004年 / 22卷 / 01期
关键词
D O I
10.1116/1.1642648
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We briefly describe the basics of electron holography, the hologram formation, as well as its acquisition and reconstruction. Our test sample requires a holographic field of view in the medium magnification range of about 20-30 kX. Two of the microscopes. (Philips) utilized for this Round Robin experiment feature a Lorentz lens for medium magnification whereas the third one (Hitachi) requires a special lens current setting in its free lens control mode. The phase images from electron holograms reveal potential differences caused by active dopants. The comparison between the phase images reconstructed from our test holograms taken with the different microscopes. show excellent agreement. (C) 2004 American Vacuum Society.
引用
收藏
页码:427 / 431
页数:5
相关论文
共 6 条
  • [1] Characterization of two-dimensional dopant profiles: Status and review
    Diebold, AC
    Kump, MR
    Kopanski, JJ
    Seiler, DG
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (01): : 196 - 201
  • [2] ELECTRON HOLOGRAPHIC OBSERVATIONS OF THE ELECTROSTATIC-FIELD ASSOCIATED WITH THIN REVERSE-BIASED P-N-JUNCTIONS
    FRABBONI, S
    MATTEUCCI, G
    POZZI, G
    VANZI, M
    [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (20) : 2196 - 2199
  • [3] Image-plane off-axis electron holography: Low-magnification arrangements
    Frost, BG
    [J]. MEASUREMENT SCIENCE AND TECHNOLOGY, 1999, 10 (04) : 333 - 339
  • [4] Two-dimensional dopant profiling of ultrashallow junctions by electron holography
    Thesen, AE
    Frost, BG
    Joy, DC
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (06): : 3063 - 3066
  • [5] Holographic voltage profiling on 75 nm gate architecture CMOS devices
    Thesen, AE
    Frost, BG
    Joy, DC
    [J]. ULTRAMICROSCOPY, 2003, 94 (3-4) : 277 - 281
  • [6] VOELKL, 1999, INTRO ELECT HOLOGRAP