Study of ion implanted Al0.25Ga0.75As/GaAs by Raman spectroscopy

被引：0

作者：

Liu, PJ ^{[1
]}

Xia, YY ^{[1
]}

Liu, XD ^{[1
]}

Lu, GW ^{[1
]}

机构：

[1] Shandong Univ, Dept Phys, Jinan 250100, Peoples R China

来源：

SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY | 2001年 / 44卷 / 12期

基金：

中国国家自然科学基金;

关键词：

ion implantation; doping; Raman spectroscopy; RBS/C measurement; lattice strain;

D O I：

10.1007/BF02880803

中图分类号：

O29 [应用数学];

学科分类号：

070104 ;

摘要：

This paper reported the effect of the weak damage in the Al0.25Ga0.75As/GaAs epitaxial layer induced by 0.8 MeV Si ions implantation with ion dose from 1 x 10(14) to 5 x 10(15)cm(-2). The Raman spectra measured on these samples showed that there were two kinds of phonon modes existing in the epitaxial Al0.25Ga0.75As films. The strains induced in the implanted layer and the corresponding lattice parameters were also evaluated as a function of the implanted dose. In addition, the Rutherford backscattering spectrometry/channeling ( RBS/C) was also measured on these samples. These two measurement techniques all confirmed that the implantation only induced weak damage in the material.

引用

页码：1621 / 1626

页数：6

共 14 条

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